Micron Technology, Inc. Memory NAND01GW3B2CN6E

Description
IC FLASH 1GBIT PARALLEL 48TSOP
Request a Quote Datasheet
Description
IC FLASH 1GBIT PARALLEL 48TSOP
Request a Quote Datasheet

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Product
Description
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IC FLASH 1GBIT PARALLEL 48TSOP

IC FLASH 1GBIT PARALLEL 48TSOP

Supplier's Site Datasheet
Memory - NAND01GW3B2CN6E-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 25ns 48-TSOP

FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 25ns 48-TSOP

Buy Now Datasheet
Memory IC and Storage Component - 774-NAND01GW3B2CN6E - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-NAND01GW3B2CN6E
Memory IC and Storage Component 774-NAND01GW3B2CN6E
IC FLASH 1GBIT PARALLEL 48TSOP Product overview: NAND01GW3B2CN6E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-NAND01GW3B2CN6E can be used for catalog matching and distributor lookup.

IC FLASH 1GBIT PARALLEL 48TSOP Product overview: NAND01GW3B2CN6E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-NAND01GW3B2CN6E can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - Flash - NAND01GW3B2CN6E - 087216-NAND01GW3B2CN6E - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - NAND01GW3B2CN6E
087216-NAND01GW3B2CN6E
Memory - Flash - NAND01GW3B2CN6E 087216-NAND01GW3B2CN6E
Manufacturer: Micron Technology Inc. Win Source Part Number: 087216-NAND01GW3B2CN 6E Packaging: Tray Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Access Time: 25ns Family Name: NAND01GW3B Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 48-TSOP Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: FLASH Alternative Parts (Cross-Reference): HN29V1G91T-30; S34ML01G204GHI010; S34ML01G204GHI000; Introduction Date: April 14, 2008 ECCN: 3A991.b.1.a Estimated EOL Date: Obsolete Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Sufficient

Manufacturer: Micron Technology Inc.
Win Source Part Number: 087216-NAND01GW3B2CN6E
Packaging: Tray
Mounting: SMD (SMT)
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Access Time: 25ns
Family Name: NAND01GW3B
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 48-TSOP
Supply Voltage - Operating: 2.7 V to 3.6 V
Memory Format: FLASH
Alternative Parts (Cross-Reference): HN29V1G91T-30; S34ML01G204GHI010; S34ML01G204GHI000;
Introduction Date: April 14, 2008
ECCN: 3A991.b.1.a
Estimated EOL Date: Obsolete
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Memory - NAND01GW3B2CN6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 1Gbit Parallel 25 ns 48-TSOP

FLASH - NAND Memory IC 1Gbit Parallel 25 ns 48-TSOP

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - NAND01GW3B2CN6E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
NAND01GW3B2CN6E
Integrated Circuits (ICs) - Memory - Memory NAND01GW3B2CN6E
IC FLASH 1GBIT PARALLEL 48TSOP

IC FLASH 1GBIT PARALLEL 48TSOP

Supplier's Site
IC FLASH 1GBIT PARALLEL 48TSOP

IC FLASH 1GBIT PARALLEL 48TSOP

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number NAND01GW3B2CN6E NAND01GW3B2CN6E-ND 774-NAND01GW3B2CN6E 087216-NAND01GW3B2CN6E NAND01GW3B2CN6E NAND01GW3B2CN6E NAND01GW3B2CN6E
Product Name Memory Memory Memory IC and Storage Component Memory - Flash - NAND01GW3B2CN6E Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH - NAND Flash Flash; Non-Volatile Flash; FLASH Flash; FLASH Flash; Non-Volatile Flash; Flash
Access Time 25 ns 25 ns 25 ns 25 ns 25 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 1000000 kbits 1000000 kbits 1000000 kbits 1000000 kbits
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