IC FLASH 1GBIT PARALLEL 48TSOP
FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 25ns 48-TSOP
IC FLASH 1GBIT PARALLEL 48TSOP Product overview: NAND01GW3B2CN6E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-NAND01GW3B2CN6E can be used for catalog matching and distributor lookup.
Manufacturer: Micron Technology Inc.
Win Source Part Number: 087216-NAND01GW3B2CN
Packaging: Tray
Mounting: SMD (SMT)
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Access Time: 25ns
Family Name: NAND01GW3B
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 48-TSOP
Supply Voltage - Operating: 2.7 V to 3.6 V
Memory Format: FLASH
Alternative Parts (Cross-Reference): HN29V1G91T-30; S34ML01G204GHI010; S34ML01G204GHI000;
Introduction Date: April 14, 2008
ECCN: 3A991.b.1.a
Estimated EOL Date: Obsolete
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Sufficient
FLASH - NAND Memory IC 1Gbit Parallel 25 ns 48-TSOP
IC FLASH 1GBIT PARALLEL 48TSOP
IC FLASH 1GBIT PARALLEL 48TSOP
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | NAND01GW3B2CN6E | NAND01GW3B2CN6E-ND | 774-NAND01GW3B2CN6E | 087216-NAND01GW3B2CN6E | NAND01GW3B2CN6E | NAND01GW3B2CN6E | NAND01GW3B2CN6E |
| Product Name | Memory | Memory | Memory IC and Storage Component | Memory - Flash - NAND01GW3B2CN6E | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | Flash; FLASH - NAND | Flash | Flash; Non-Volatile | Flash; FLASH | Flash; FLASH | Flash; Non-Volatile | Flash; Flash |
| Access Time | 25 ns | 25 ns | 25 ns | 25 ns | 25 ns | ||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 1000000 kbits | 1000000 kbits | 1000000 kbits | 1000000 kbits |