Micron Technology, Inc. 3V 3.3V Memory IC and Storage Component NAND01GW3B2BN6E

Description
NAND Flash Parallel 3V/3.3V 1G-bit 128M x 8 25us 48-Pin TSOP Tray Product overview: NAND01GW3B2BN6E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3V, 3.3V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 3V, 3.3V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-NAND01GW3B2BN6E can be used for catalog matching and distributor lookup.
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Description
NAND Flash Parallel 3V/3.3V 1G-bit 128M x 8 25us 48-Pin TSOP Tray Product overview: NAND01GW3B2BN6E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3V, 3.3V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 3V, 3.3V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-NAND01GW3B2BN6E can be used for catalog matching and distributor lookup.
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Suppliers

Company
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Supplier Links
3V 3.3V Memory IC and Storage Component - 774-NAND01GW3B2BN6E - ERSAELECTRONICS PTE. LTD.
Singapore
3V 3.3V Memory IC and Storage Component
774-NAND01GW3B2BN6E
3V 3.3V Memory IC and Storage Component 774-NAND01GW3B2BN6E
NAND Flash Parallel 3V/3.3V 1G-bit 128M x 8 25us 48-Pin TSOP Tray Product overview: NAND01GW3B2BN6E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3V, 3.3V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 3V, 3.3V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-NAND01GW3B2BN6E can be used for catalog matching and distributor lookup.

NAND Flash Parallel 3V/3.3V 1G-bit 128M x 8 25us 48-Pin TSOP Tray Product overview: NAND01GW3B2BN6E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3V, 3.3V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 3V, 3.3V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-NAND01GW3B2BN6E can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD.
Product Category Memory Chips
Product Number 774-NAND01GW3B2BN6E
Product Name 3V 3.3V Memory IC and Storage Component
Memory Category Flash
Access Time 25000 ns
Operating Temperature -40 C (-40 F)
Density 1000000 kbits
Number of Words 128000 k
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