Micron Technology, Inc. Memory NAND01GR3B2CZA6E

Description
IC FLASH 1GBIT PARALLEL 63VFBGA
Request a Quote Datasheet
Description
IC FLASH 1GBIT PARALLEL 63VFBGA
Request a Quote Datasheet

Suppliers

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Product
Description
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IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site Datasheet
Memory - Flash - NAND01GR3B2CZA6E - 087929-NAND01GR3B2CZA6E - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - NAND01GR3B2CZA6E
087929-NAND01GR3B2CZA6E
Memory - Flash - NAND01GR3B2CZA6E 087929-NAND01GR3B2CZA6E
Manufacturer: Micron Technology Inc. Win Source Part Number: 087929-NAND01GR3B2CZ A6E Packaging: Tray Mounting Style: SMD Technology: FLASH - NAND Memory Type: Non-Volatile Memory Size: 1Gb (128M x 8) Access Time: 25ns Categories: Integrated Circuits Supplier Device Package: 63-VFBGA (9.5x12) Status: Obsolete Temperature Range - Operating: -40°C ~ 85°C Memory Format: FLASH Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Manufacturer Package: 63-TFBGA Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance Quantity per package: 1,260 Family Part Number: NAND01G-A Manufacturer Pack Quantity: 1,260 MSL Level: 3 (168 Hours) Supply Voltage (V): 1.7V ~ 1.95V

Manufacturer: Micron Technology Inc.
Win Source Part Number: 087929-NAND01GR3B2CZA6E
Packaging: Tray
Mounting Style: SMD
Technology: FLASH - NAND
Memory Type: Non-Volatile
Memory Size: 1Gb (128M x 8)
Access Time: 25ns
Categories: Integrated Circuits
Supplier Device Package: 63-VFBGA (9.5x12)
Status: Obsolete
Temperature Range - Operating: -40°C ~ 85°C
Memory Format: FLASH
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Manufacturer Package: 63-TFBGA
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
Quantity per package: 1,260
Family Part Number: NAND01G-A
Manufacturer Pack Quantity: 1,260
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.7V ~ 1.95V

Buy Now Datasheet
Memory IC and Storage Component - 774-NAND01GR3B2CZA6E - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-NAND01GR3B2CZA6E
Memory IC and Storage Component 774-NAND01GR3B2CZA6E
IC FLASH 1GBIT PARALLEL 63VFBGA Product overview: NAND01GR3B2CZA6E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-NAND01GR3B2CZA6E can be used for catalog matching and distributor lookup.

IC FLASH 1GBIT PARALLEL 63VFBGA Product overview: NAND01GR3B2CZA6E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-NAND01GR3B2CZA6E can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - NAND01GR3B2CZA6E-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 25ns 63-VFBGA (9.5x12)

FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 25ns 63-VFBGA (9.5x12)

Buy Now Datasheet
Memory - NAND01GR3B2CZA6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 1Gbit Parallel 25 ns 63-VFBGA (9.5x12)

FLASH - NAND Memory IC 1Gbit Parallel 25 ns 63-VFBGA (9.5x12)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - NAND01GR3B2CZA6E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
NAND01GR3B2CZA6E
Integrated Circuits (ICs) - Memory - Memory NAND01GR3B2CZA6E
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number NAND01GR3B2CZA6E 087929-NAND01GR3B2CZA6E 774-NAND01GR3B2CZA6E NAND01GR3B2CZA6E-ND NAND01GR3B2CZA6E NAND01GR3B2CZA6E NAND01GR3B2CZA6E
Product Name Memory Memory - Flash - NAND01GR3B2CZA6E Memory IC and Storage Component Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH - NAND Flash; Non-Volatile Flash; Non-Volatile Flash Flash; FLASH Flash; Non-Volatile Flash; Flash
Access Time 25 ns 25 ns 25 ns 25 ns 25 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 1000000 kbits 1000000 kbits 1000000 kbits 1000000 kbits
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4 suppliers