IC FLASH 1GBIT PARALLEL 63VFBGA Product overview: NAND01GR3B2BZA6E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-NAND01GR3B2BZA6E
FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 30ns 63-VFBGA (9x11)
FLASH - NAND Memory IC 1Gbit Parallel 30 ns 63-VFBGA (9x11)
IC FLASH 1GBIT PARALLEL 63VFBGA
IC FLASH 1GBIT PARALLEL 63VFBGA
| ERSAELECTRONICS PTE. LTD. | DigiKey | Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-NAND01GR3B2BZA6E | NAND01GR3B2BZA6E-ND | NAND01GR3B2BZA6E | NAND01GR3B2BZA6E | NAND01GR3B2BZA6E |
| Product Name | Memory IC and Storage Component | Memory | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | Flash; Non-Volatile | Flash | Flash; FLASH | Flash; Flash | Flash; Non-Volatile |
| Access Time | 30 ns | 30 ns | 30 ns | ||
| Cycle Time | 30 ns | 30 ns | |||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) |
