Micron Technology, Inc. Memory N25Q128A13ESFC0G

Description
FLASH - NOR Memory IC 128Mb (32M x 4) SPI 108MHz 16-SOP2
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Description
FLASH - NOR Memory IC 128Mb (32M x 4) SPI 108MHz 16-SOP2
Request a Quote
Datasheet
Datasheet Summary
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The N25Q128A13ESFC0G is a 128Mb serial NOR Flash memory device from Quarktwin Technology Ltd. It operates with a single supply voltage range of 2.7V to 3.6V and features a SPI-compatible interface with a maximum clock frequency of 108 MHz. The device supports dual and quad I/O instructions, allowing for increased throughput of up to 432 MHz. This memory supports various protocols, including Extended SPI, dual I/O, and quad I/O, and is capable of execute-in-place (XIP) mode, enabling direct execution of code from the memory after power-on. It includes programmable and erasable capabilities with 4KB subsector and 64KB sector erase options, as well as full-chip erase functionality. The device features a software write protection mechanism applicable to every 64KB sector and hardware write protection defined by nonvolatile bits. It also provides a 64-byte user-lockable one-time programmable area and has a minimum endurance of 100,000 erase cycles per sector with over 20 years of data retention. The N25Q128A13ESFC0G is available in multiple package options, all compliant with RoHS standards.

Datasheet Summary
Powered by GS/AI

The N25Q128A13ESFC0G is a 128Mb serial NOR Flash memory device from Quarktwin Technology Ltd. It operates with a single supply voltage range of 2.7V to 3.6V and features a SPI-compatible interface with a maximum clock frequency of 108 MHz. The device supports dual and quad I/O instructions, allowing for increased throughput of up to 432 MHz. This memory supports various protocols, including Extended SPI, dual I/O, and quad I/O, and is capable of execute-in-place (XIP) mode, enabling direct execution of code from the memory after power-on. It includes programmable and erasable capabilities with 4KB subsector and 64KB sector erase options, as well as full-chip erase functionality. The device features a software write protection mechanism applicable to every 64KB sector and hardware write protection defined by nonvolatile bits. It also provides a 64-byte user-lockable one-time programmable area and has a minimum endurance of 100,000 erase cycles per sector with over 20 years of data retention. The N25Q128A13ESFC0G is available in multiple package options, all compliant with RoHS standards.

Suppliers

Company
Product
Description
Supplier Links
Memory - N25Q128A13ESFC0G-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 128Mb (32M x 4) SPI 108MHz 16-SOP2

FLASH - NOR Memory IC 128Mb (32M x 4) SPI 108MHz 16-SOP2

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - N25Q128A13ESFC0G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
N25Q128A13ESFC0G
Integrated Circuits (ICs) - Memory - Memory N25Q128A13ESFC0G
IC FLASH 128MBIT SPI 16SOP2

IC FLASH 128MBIT SPI 16SOP2

Supplier's Site
Memory - N25Q128A13ESFC0G - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 128Mbit SPI 108 MHz 16-SOP2

FLASH - NOR Memory IC 128Mbit SPI 108 MHz 16-SOP2

Buy Now Datasheet
IC FLASH 128MBIT SPI 16SOP2

IC FLASH 128MBIT SPI 16SOP2

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number N25Q128A13ESFC0G-ND N25Q128A13ESFC0G N25Q128A13ESFC0G N25Q128A13ESFC0G
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash Flash; Non-Volatile Flash; FLASH Flash; Flash
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 128000 kbits 128000 kbits 128000 kbits 128000 kbits
Package Type SOIC; "16-SOIC (0.295"", 7.50mm Width)" SOIC; 16-SOIC (0.295\", 7.50mm Width)
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