Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory N25Q128A13ESEDFF TR

Description
IC FLASH 128MBIT SPI 108MHZ 8SO
Description
IC FLASH 128MBIT SPI 108MHZ 8SO

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - N25Q128A13ESEDFF TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
N25Q128A13ESEDFF TR
Integrated Circuits (ICs) - Memory - Memory N25Q128A13ESEDFF TR
IC FLASH 128MBIT SPI 108MHZ 8SO

IC FLASH 128MBIT SPI 108MHZ 8SO

Supplier's Site
IC FLASH 128MBIT SPI 108MHZ 8SO

IC FLASH 128MBIT SPI 108MHZ 8SO

Supplier's Site
Memory - N25Q128A13ESEDFF TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 128Mbit SPI 108 MHz 8-SO

FLASH - NOR Memory IC 128Mbit SPI 108 MHz 8-SO

Buy Now

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number N25Q128A13ESEDFF TR N25Q128A13ESEDFF TR N25Q128A13ESEDFF TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; Non-Volatile Flash; Flash Flash; FLASH
Data Rate 108 MHz
Cycle Time 8.00E6 to 5.00E6 ns
Density 128000 kbits 128000 kbits 128000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

 - 93415FM - Rochester Electronics
Specs
Memory Category SRAM Chip
Package Type CDFP16
View Details
3 suppliers
Logic - FIFOs Memory - 67C402-10N - Lingto Electronic Limited
Specs
Data Rate 10 MHz
Operating Current 35 mA
View Details
Quad Memory IC and Storage Component - 774-S25FL064LABNFN040 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category Flash
Access Time 8 ns
Endurance 100000 Write/Erase Cycles
View Details
4 suppliers
Memory - AS8ER128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 150 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details