Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory N25Q064A11ESECFE

Description
IC FLASH 64MBIT SPI 108MHZ 8SO
Datasheet
Description
IC FLASH 64MBIT SPI 108MHZ 8SO
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - N25Q064A11ESECFE - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
N25Q064A11ESECFE
Integrated Circuits (ICs) - Memory - Memory N25Q064A11ESECFE
IC FLASH 64MBIT SPI 108MHZ 8SO

IC FLASH 64MBIT SPI 108MHZ 8SO

Supplier's Site
IC FLASH 64MBIT SPI 108MHZ 8SO

IC FLASH 64MBIT SPI 108MHZ 8SO

Supplier's Site Datasheet
Memory - N25Q064A11ESECFE - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 64Mbit SPI 108 MHz 8-SO

FLASH - NOR Memory IC 64Mbit SPI 108 MHz 8-SO

Buy Now

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number N25Q064A11ESECFE N25Q064A11ESECFE N25Q064A11ESECFE
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; Non-Volatile Flash; Flash Flash; FLASH
Data Rate 108 MHz
Cycle Time 8.00E6 to 5.00E6 ns
Density 64000 kbits 64000 kbits 64000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882769P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 2048000 kbits
Package Type SOIC; SOIC
View Details
Memory - AS8F2M32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 90 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 00002161771 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details