Micron Technology, Inc. Memory MT62F512M32D2DS-031 WT:B

Description
IC DRAM 16GBIT PAR 200WFBGA
Request a Quote Datasheet
Description
IC DRAM 16GBIT PAR 200WFBGA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 557-MT62F512M32D2DS-031WT:B-ND - DigiKey
Thief River Falls, MN, United States
IC DRAM 16GBIT PAR 200WFBGA

IC DRAM 16GBIT PAR 200WFBGA

Buy Now Datasheet
Memory IC and Storage Component - 774-MT62F512M32D2DS-031 WT:B - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-MT62F512M32D2DS-031 WT:B
Memory IC and Storage Component 774-MT62F512M32D2DS-031 WT:B
LPDDR5 16G 512MX32 FBGA DDP Product overview: MT62F512M32D2DS-031 WT:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT62F512M32D2DS- 031 WT:B can be used for catalog matching and distributor lookup.

LPDDR5 16G 512MX32 FBGA DDP Product overview: MT62F512M32D2DS-031 WT:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT62F512M32D2DS-031 WT:B can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
DRAM -  - Win Source Electronics
Laguna Hills, CA, United States
DRAM
DRAM
Category: DRAM Manufacturer: Micron Technology Inc.

Category: DRAM
Manufacturer: Micron Technology Inc.

Buy Now
LPDDR5 16G 512MX32 FBGA DDP

LPDDR5 16G 512MX32 FBGA DDP

Supplier's Site
Lpddr516G512Mx32Fbgaddp, Tray Rohs Compliant Micron - 80AH8506 - Newark, An Avnet Company
Chicago, IL, United States
Lpddr516G512Mx32Fbgaddp, Tray Rohs Compliant Micron
80AH8506
Lpddr516G512Mx32Fbgaddp, Tray Rohs Compliant Micron 80AH8506
LPDDR516G512MX32FBGA DDP, TRAY ROHS COMPLIANT: YES

LPDDR516G512MX32FBGADDP, TRAY ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) Newark, An Avnet Company
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 557-MT62F512M32D2DS-031WT:B-ND 774-MT62F512M32D2DS-031 WT:B MT62F512M32D2DS-031 WT:B 80AH8506
Product Name Memory Memory IC and Storage Component DRAM Memory Lpddr516G512Mx32Fbgaddp, Tray Rohs Compliant Micron
Memory Category DRAM Chip Volatile; DRAM Chip SDRAM - Mobile LPDDR5
Operating Temperature -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F)
Package Type 200-WFBGA BGA; Box 200-WFBGA
Density 16000000 kbits 16000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MYX6M4424 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category MOSFET
Operating Temperature -55 to 125 C (-67 to 257 F)
Package Type CDIP-8LD
View Details
SDRAM - 2420777P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 0.4000 ns
Number of Words 64000 k
View Details
Memory - 8 611 200 833 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers