Micron Technology, Inc. Memory MT61K512M32KPA-16:B

Description
SGRAM - GDDR6 Memory IC 16Gbit Parallel 8 GHz 180-FBGA (12x14)
Datasheet
Description
SGRAM - GDDR6 Memory IC 16Gbit Parallel 8 GHz 180-FBGA (12x14)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT61K512M32KPA-16:B - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SGRAM - GDDR6 Memory IC 16Gbit Parallel 8 GHz 180-FBGA (12x14)

SGRAM - GDDR6 Memory IC 16Gbit Parallel 8 GHz 180-FBGA (12x14)

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Integrated Circuits (ICs) - Memory - MT61K512M32KPA-16:B - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
MT61K512M32KPA-16:B
Integrated Circuits (ICs) - Memory MT61K512M32KPA-16:B
IC DRAM 16GBIT PARALLEL 180FBGA

IC DRAM 16GBIT PARALLEL 180FBGA

Supplier's Site
IC DRAM 16GBIT PARALLEL 180FBGA

IC DRAM 16GBIT PARALLEL 180FBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT61K512M32KPA-16:B MT61K512M32KPA-16:B MT61K512M32KPA-16:B
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F)
Density 16000000 kbits 16000000 kbits 16000000 kbits
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