The MT58L512L18FF-10 is an 8Mb SyncBurst SRAM from Quarktwin Technology Ltd., featuring a 512K x 18 configuration. It operates on a single +3.3V power supply with a separate output buffer supply option of +3.3V or +2.5V. The device supports fast access times with options of 7.5ns, 8.5ns, and 10ns, making it suitable for high-speed applications. It includes a snooze mode for reduced power consumption during standby and supports burst operations with interleaved or linear modes. The SRAM features individual byte write control and global write capabilities, along with three chip enables for easy depth expansion. It is designed with registered addresses and control signals, allowing for simplified write cycles. The device is available in a 100-pin TQFP or a 165-pin FBGA package, making it versatile for various applications. The operating temperature range includes commercial (0¬8C to +70¬8C) and industrial (-40¬8C to +85¬8C) options, catering to different environmental requirements. This product is well-suited for systems requiring a wide synchronous data bus, such as 486, Pentium, and PowerPC architectures.
Cache SRAM, 512KX18, 10ns PBGA165
CACHE SRAM 512KX18 10NS PBGA165
SRAM - Standard Memory IC 8Mbit Parallel 66 MHz 10 ns 165-FBGA (13x15)
| Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT58L512L18FF-10 | MT58L512L18FF-10 | MT58L512L18FF-10 |
| Product Name | Integrated Circuits (ICs) - Memory | Memory | |
| Memory Category | SRAM Chip | SRAM; SRAM Chip | |
| Package Type | BGA; PBGA165 | BGA; 165-TBGA | |
| Access Time | 10 ns |
