Micron Technology, Inc. Memory MT57V512H36EF-5

Description
DDR SRAM, 512KX36, 2.4ns, CMOS, PBGA165
Request a Quote Datasheet
Description
DDR SRAM, 512KX36, 2.4ns, CMOS, PBGA165
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - MT57V512H36EF-5 - Rochester Electronics
Newburyport, MA, United States
DDR SRAM, 512KX36, 2.4ns, CMOS, PBGA165

DDR SRAM, 512KX36, 2.4ns, CMOS, PBGA165

Supplier's Site Datasheet
Memory - MT57V512H36EF-5 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous Memory IC 18Mbit Parallel 200 MHz 2.4 ns 165-FBGA (13x15)

SRAM - Synchronous Memory IC 18Mbit Parallel 200 MHz 2.4 ns 165-FBGA (13x15)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - MT57V512H36EF-5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
MT57V512H36EF-5
Integrated Circuits (ICs) - Memory MT57V512H36EF-5
DDR SRAM, 512KX36, 2.4NS, CMOS

DDR SRAM, 512KX36, 2.4NS, CMOS

Supplier's Site

Technical Specifications

  Rochester Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT57V512H36EF-5 MT57V512H36EF-5 MT57V512H36EF-5
Product Name Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM Chip SRAM; SRAM Chip Active
Logic Family CMOS
Package Type BGA; BGA165 BGA; 165-TBGA
Access Time 2.4 ns
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