DDR SRAM, 512KX36, 2.4ns, CMOS, PBGA165
DDR SRAM, 512KX36, 2.4NS, CMOS
SRAM - Synchronous Memory IC 18Mbit Parallel 200 MHz 2.4 ns 165-FBGA (13x15)
| Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT57V512H36EF-5 | MT57V512H36EF-5 | MT57V512H36EF-5 |
| Product Name | Integrated Circuits (ICs) - Memory | Memory | |
| Memory Category | SRAM Chip | Active | SRAM; SRAM Chip |
| Logic Family | CMOS | ||
| Package Type | BGA; BGA165 | BGA; 165-TBGA | |
| Access Time | 2.4 ns |
