Micron Technology, Inc. Memory MT55V512V36FT-8.8

Description
SRAM - Synchronous, ZBT Memory IC 18Mbit Parallel 113 MHz 6.5 ns 100-TQFP (14x20.1)
Datasheet
Description
SRAM - Synchronous, ZBT Memory IC 18Mbit Parallel 113 MHz 6.5 ns 100-TQFP (14x20.1)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT55V512V36FT-8.8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, ZBT Memory IC 18Mbit Parallel 113 MHz 6.5 ns 100-TQFP (14x20.1)

SRAM - Synchronous, ZBT Memory IC 18Mbit Parallel 113 MHz 6.5 ns 100-TQFP (14x20.1)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT55V512V36FT-8.8 - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
MT55V512V36FT-8.8
Integrated Circuits (ICs) - Memory - Memory MT55V512V36FT-8.8
IC SRAM 18MBIT PAR 100TQFP

IC SRAM 18MBIT PAR 100TQFP

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips
Product Number MT55V512V36FT-8.8 MT55V512V36FT-8.8
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 6.5 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 18000 kbits 18000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - CY14MB064Q1B-SXIT - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category NVSRAM; NVSRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 64 kbits
View Details
2 suppliers
Memory - 7164L25DB - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 25 ns
Density 64 kbits
View Details
Memory - AS8S512K32PECB - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details