Micron Technology, Inc. Memory MT55V512V36FT-8.8

Description
SRAM - Synchronous, ZBT Memory IC 18Mbit Parallel 113 MHz 6.5 ns 100-TQFP (14x20.1)
Datasheet
Description
SRAM - Synchronous, ZBT Memory IC 18Mbit Parallel 113 MHz 6.5 ns 100-TQFP (14x20.1)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT55V512V36FT-8.8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, ZBT Memory IC 18Mbit Parallel 113 MHz 6.5 ns 100-TQFP (14x20.1)

SRAM - Synchronous, ZBT Memory IC 18Mbit Parallel 113 MHz 6.5 ns 100-TQFP (14x20.1)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT55V512V36FT-8.8 - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
MT55V512V36FT-8.8
Integrated Circuits (ICs) - Memory - Memory MT55V512V36FT-8.8
IC SRAM 18MBIT PAR 100TQFP

IC SRAM 18MBIT PAR 100TQFP

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips
Product Number MT55V512V36FT-8.8 MT55V512V36FT-8.8
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 6.5 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 18000 kbits 18000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71V2576S133PFG - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 4.2 ns
Density 4500 kbits
View Details
Memories - nvSRAM (non-volatile SRAM) - CY14V101QS-SF108XI - CY14V101QS-SF108XI - Infineon Technologies AG
Specs
Memory Category SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 1000 kbits
View Details
7 suppliers
Memory IC and Storage Component - 736-DP8430V-33 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category DRAM Chip
Operating Temperature 0 C (32 F)
Address Bus Width 20 bits
View Details
3 suppliers
SDRAM - 2420773P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 64000 k
View Details