Micron Technology, Inc. Memory MT55V512V36FT-10

Description
SRAM - Synchronous, ZBT Memory IC 18Mbit Parallel 100 MHz 7.5 ns 100-TQFP (14x20.1)
Datasheet
Description
SRAM - Synchronous, ZBT Memory IC 18Mbit Parallel 100 MHz 7.5 ns 100-TQFP (14x20.1)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT55V512V36FT-10 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, ZBT Memory IC 18Mbit Parallel 100 MHz 7.5 ns 100-TQFP (14x20.1)

SRAM - Synchronous, ZBT Memory IC 18Mbit Parallel 100 MHz 7.5 ns 100-TQFP (14x20.1)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - MT55V512V36FT-10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
MT55V512V36FT-10
Integrated Circuits (ICs) - Memory MT55V512V36FT-10
IC SRAM 18MBIT PARALLEL 100TQFP

IC SRAM 18MBIT PARALLEL 100TQFP

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number MT55V512V36FT-10 MT55V512V36FT-10
Product Name Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 7.5 ns 7.5 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 18000 kbits 18000 kbits
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