Micron Technology, Inc. Memory MT55L512Y32PT-10

Description
ZBT SRAM, 512KX32, 5ns PQFP100
Request a Quote Datasheet
Description
ZBT SRAM, 512KX32, 5ns PQFP100
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - MT55L512Y32PT-10 - Rochester Electronics
Newburyport, MA, United States
ZBT SRAM, 512KX32, 5ns PQFP100

ZBT SRAM, 512KX32, 5ns PQFP100

Supplier's Site Datasheet
Memory - MT55L512Y32PT-10 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous, ZBT Memory IC 18Mbit Parallel 100 MHz 5 ns 100-TQFP (14x20.1)

SRAM - Asynchronous, ZBT Memory IC 18Mbit Parallel 100 MHz 5 ns 100-TQFP (14x20.1)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT55L512Y32PT-10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT55L512Y32PT-10
Integrated Circuits (ICs) - Memory - Memory MT55L512Y32PT-10
IC SRAM 18MBIT PAR 100TQFP

IC SRAM 18MBIT PAR 100TQFP

Supplier's Site

Technical Specifications

  Rochester Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT55L512Y32PT-10 MT55L512Y32PT-10 MT55L512Y32PT-10
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Package Type QFP; QFP100 QFP; 100-LQFP
Access Time 5 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

 - 27S03ADM/B - Rochester Electronics
Rochester Electronics
Specs
Memory Category SRAM Chip
Density 0 kbits
Package Type DIP; CDIP16
View Details
4 suppliers
Memory - JM38510/23104BFA - Quarktwin Technology Ltd.
View Details
2 suppliers
Memory - AS8FLC1M32A - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
SDRAM - 2420777 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 0.4000 ns
Number of Words 64000 k
View Details