Micron Technology, Inc. Memory MT54V512H36EF-5

Description
QDR SRAM, 512KX36, 2.2ns PBGA165
Request a Quote Datasheet
Description
QDR SRAM, 512KX36, 2.2ns PBGA165
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - MT54V512H36EF-5 - Rochester Electronics
Newburyport, MA, United States
QDR SRAM, 512KX36, 2.2ns PBGA165

QDR SRAM, 512KX36, 2.2ns PBGA165

Supplier's Site Datasheet
Memory - MT54V512H36EF-5 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous Memory IC 18Mbit HSTL 200 MHz 2.2 ns 165-FBGA (13x15)

SRAM - Synchronous Memory IC 18Mbit HSTL 200 MHz 2.2 ns 165-FBGA (13x15)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - MT54V512H36EF-5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
MT54V512H36EF-5
Integrated Circuits (ICs) - Memory MT54V512H36EF-5
QDR SRAM, 512KX36, 2.2NS PBGA165

QDR SRAM, 512KX36, 2.2NS PBGA165

Supplier's Site

Technical Specifications

  Rochester Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT54V512H36EF-5 MT54V512H36EF-5 MT54V512H36EF-5
Product Name Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM Chip SRAM; SRAM Chip
Package Type BGA; PBGA165 BGA; 165-TBGA
Access Time 2.2 ns
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