Micron Technology, Inc. Integrated Circuits (ICs) - Memory MT54V512H36EF-5

Description
QDR SRAM, 512KX36, 2.2ns PBGA165
Request a Quote Datasheet
Description
QDR SRAM, 512KX36, 2.2ns PBGA165
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - MT54V512H36EF-5 - Rochester Electronics
Newburyport, MA, United States
QDR SRAM, 512KX36, 2.2ns PBGA165

QDR SRAM, 512KX36, 2.2ns PBGA165

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - MT54V512H36EF-5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
MT54V512H36EF-5
Integrated Circuits (ICs) - Memory MT54V512H36EF-5
QDR SRAM, 512KX36, 2.2NS PBGA165

QDR SRAM, 512KX36, 2.2NS PBGA165

Supplier's Site
Memory - MT54V512H36EF-5 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous Memory IC 18Mbit HSTL 200 MHz 2.2 ns 165-FBGA (13x15)

SRAM - Synchronous Memory IC 18Mbit HSTL 200 MHz 2.2 ns 165-FBGA (13x15)

Buy Now Datasheet

Technical Specifications

  Rochester Electronics Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT54V512H36EF-5 MT54V512H36EF-5 MT54V512H36EF-5
Product Name Integrated Circuits (ICs) - Memory Memory
Memory Category SRAM Chip SRAM; SRAM Chip
Package Type BGA; PBGA165 BGA; 165-TBGA
Access Time 2.2 ns
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 2420769 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 128000 k
View Details
Memory - 71V3556S133PFGI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 4.2 ns
Density 4500 kbits
View Details
Memory - AS5SP128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SSRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 1024 kbits
View Details