Micron Technology, Inc. Memory MT54V512H18EF-6C

Description
512K X 18 2.5V VDD HSTL QDRB4 SRAM
Request a Quote Datasheet
Description
512K X 18 2.5V VDD HSTL QDRB4 SRAM
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - MT54V512H18EF-6C - Rochester Electronics
Newburyport, MA, United States
512K X 18 2.5V VDD HSTL QDRB4 SRAM

512K X 18 2.5V VDD HSTL QDRB4 SRAM

Supplier's Site Datasheet
Memory - MT54V512H18EF-6C - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous Memory IC 9Mbit HSTL 167 MHz 2.5 ns 165-FBGA (13x15)

SRAM - Synchronous Memory IC 9Mbit HSTL 167 MHz 2.5 ns 165-FBGA (13x15)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - MT54V512H18EF-6C - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
MT54V512H18EF-6C
Integrated Circuits (ICs) - Memory MT54V512H18EF-6C
512KX18 2.5V VDD HSTL QDRB4 SRAM

512KX18 2.5V VDD HSTL QDRB4 SRAM

Supplier's Site

Technical Specifications

  Rochester Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT54V512H18EF-6C MT54V512H18EF-6C MT54V512H18EF-6C
Product Name Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM Chip SRAM; SRAM Chip
Package Type BGA; PBGA165 BGA; 165-TBGA
Access Time 2.5 ns
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