Micron Technology, Inc. Memory MT54V512H18EF-10

Description
QDR SRAM, 512KX18, 3ns PBGA165
Request a Quote Datasheet
Description
QDR SRAM, 512KX18, 3ns PBGA165
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - MT54V512H18EF-10 - Rochester Electronics
Newburyport, MA, United States
QDR SRAM, 512KX18, 3ns PBGA165

QDR SRAM, 512KX18, 3ns PBGA165

Supplier's Site Datasheet
Memory - MT54V512H18EF-10 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Quad Port, Synchronous Memory IC 9Mbit Parallel 100 MHz 165-FBGA (13x15)

SRAM - Quad Port, Synchronous Memory IC 9Mbit Parallel 100 MHz 165-FBGA (13x15)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - MT54V512H18EF-10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
MT54V512H18EF-10
Integrated Circuits (ICs) - Memory MT54V512H18EF-10
IC SRAM 9MBIT PARALLEL 165FBGA

IC SRAM 9MBIT PARALLEL 165FBGA

Supplier's Site

Technical Specifications

  Rochester Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT54V512H18EF-10 MT54V512H18EF-10 MT54V512H18EF-10
Product Name Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Package Type BGA; PBGA165 BGA; 165-TBGA BGA
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
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