Micron Technology, Inc. Memory MT54V512H18EF-10

Description
QDR SRAM, 512KX18, 3ns PBGA165
Request a Quote Datasheet
Description
QDR SRAM, 512KX18, 3ns PBGA165
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - MT54V512H18EF-10 - Rochester Electronics
Newburyport, MA, United States
QDR SRAM, 512KX18, 3ns PBGA165

QDR SRAM, 512KX18, 3ns PBGA165

Supplier's Site Datasheet
Memory - MT54V512H18EF-10 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Quad Port, Synchronous Memory IC 9Mbit Parallel 100 MHz 165-FBGA (13x15)

SRAM - Quad Port, Synchronous Memory IC 9Mbit Parallel 100 MHz 165-FBGA (13x15)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - MT54V512H18EF-10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
MT54V512H18EF-10
Integrated Circuits (ICs) - Memory MT54V512H18EF-10
IC SRAM 9MBIT PARALLEL 165FBGA

IC SRAM 9MBIT PARALLEL 165FBGA

Supplier's Site

Technical Specifications

  Rochester Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT54V512H18EF-10 MT54V512H18EF-10 MT54V512H18EF-10
Product Name Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Package Type BGA; PBGA165 BGA; 165-TBGA BGA
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882540 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details
Controllers - BQ2204ASN-NTR - Quarktwin Technology Ltd.
Specs
Operating Temperature -40 to 85 C (-40 to 185 F)
Package Type SOIC; 16-SOIC (0.154\", 3.90mm Width)
Supply Voltage 4.5V ~ 5.5V
View Details
2 suppliers
Memory - AS8SLC512K32PECA - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 71V2546S100PFG - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 5 ns
Density 4500 kbits
View Details