Micron Technology, Inc. Memory MT53E512M64D2NZ-46 WT:B TR

Description
IC DRAM 32GBIT PAR 376WFBGA
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Description
IC DRAM 32GBIT PAR 376WFBGA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 557-MT53E512M64D2NZ-46WT:BTR-ND - DigiKey
Thief River Falls, MN, United States
IC DRAM 32GBIT PAR 376WFBGA

IC DRAM 32GBIT PAR 376WFBGA

Buy Now Datasheet
SDRAM - Mobile LPDDR4 Memory IC 32Gbit Parallel 2.133 GHz 3.5 ns 376-WFBGA (14x14)

SDRAM - Mobile LPDDR4 Memory IC 32Gbit Parallel 2.133 GHz 3.5 ns 376-WFBGA (14x14)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory MT53E512M64D2NZ-46 WT:B TR
IC DRAM LPDDR4 32G 512MX64 FBGA

IC DRAM LPDDR4 32G 512MX64 FBGA

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 557-MT53E512M64D2NZ-46WT:BTR-ND MT53E512M64D2NZ-46 WT:B TR MT53E512M64D2NZ-46 WT:B TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F)
Package Type 376-WFBGA BGA; 376-WFBGA BGA
Supply Voltage 1.06V ~ 1.17V 1.06V ~ 1.17V 1.06V ~ 1.17V
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