Micron Technology, Inc. Memory MT53E512M64D2NZ-46 WT:B TR

Description
IC DRAM 32GBIT PAR 376WFBGA
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Description
IC DRAM 32GBIT PAR 376WFBGA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 557-MT53E512M64D2NZ-46WT:BTR-ND - DigiKey
Thief River Falls, MN, United States
IC DRAM 32GBIT PAR 376WFBGA

IC DRAM 32GBIT PAR 376WFBGA

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Integrated Circuits (ICs) - Memory MT53E512M64D2NZ-46 WT:B TR
IC DRAM LPDDR4 32G 512MX64 FBGA

IC DRAM LPDDR4 32G 512MX64 FBGA

Supplier's Site
SDRAM - Mobile LPDDR4 Memory IC 32Gbit Parallel 2.133 GHz 3.5 ns 376-WFBGA (14x14)

SDRAM - Mobile LPDDR4 Memory IC 32Gbit Parallel 2.133 GHz 3.5 ns 376-WFBGA (14x14)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 557-MT53E512M64D2NZ-46WT:BTR-ND MT53E512M64D2NZ-46 WT:B TR MT53E512M64D2NZ-46 WT:B TR
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F)
Package Type 376-WFBGA BGA BGA; 376-WFBGA
Supply Voltage 1.06V ~ 1.17V 1.06V ~ 1.17V 1.06V ~ 1.17V
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