Micron Technology, Inc. Dram, 512M X 32Bit, -25 To 85Deg C; Dram Type Micron MT53E512M32D2FW-046 WT ES:D

Description
DRAM, 512M X 32BIT, -25 TO 85DEG C; DRAM Type:LPDDR4; DRAM Density:16Gbit; DRAM Memory Configuration:512M x 32bit; Clock Frequency:2.133GHz; Memory Case Style:TFBGA; No. of Pins:200Pins; Supply Voltage Nom:1.1V; Access Time:- RoHS Compliant: Yes
  • Dram, 512M X 32Bit, -25 To 85Deg C; Dram Type Micron - 80AH8419 - Newark, An Avnet Company
    Newark, An Avnet Company
Description
DRAM, 512M X 32BIT, -25 TO 85DEG C; DRAM Type:LPDDR4; DRAM Density:16Gbit; DRAM Memory Configuration:512M x 32bit; Clock Frequency:2.133GHz; Memory Case Style:TFBGA; No. of Pins:200Pins; Supply Voltage Nom:1.1V; Access Time:- RoHS Compliant: Yes

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Dram, 512M X 32Bit, -25 To 85Deg C; Dram Type Micron - 80AH8419 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Dram, 512M X 32Bit, -25 To 85Deg C; Dram Type Micron
80AH8419
Dram, 512M X 32Bit, -25 To 85Deg C; Dram Type Micron 80AH8419
DRAM, 512M X 32BIT, -25 TO 85DEG C; DRAM Type:LPDDR4; DRAM Density:16Gbit; DRAM Memory Configuration:512M x 32bit; Clock Frequency:2.133GHz; Memory Case Style:TFBGA; No. of Pins:200Pins; Supply Voltage Nom:1.1V; Access Time:- RoHS Compliant: Yes

DRAM, 512M X 32BIT, -25 TO 85DEG C; DRAM Type:LPDDR4; DRAM Density:16Gbit; DRAM Memory Configuration:512M x 32bit; Clock Frequency:2.133GHz; Memory Case Style:TFBGA; No. of Pins:200Pins; Supply Voltage Nom:1.1V; Access Time:- RoHS Compliant: Yes

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Technical Specifications

  Newark, An Avnet Company
Product Category Memory Chips
Product Number 80AH8419
Product Name Dram, 512M X 32Bit, -25 To 85Deg C; Dram Type Micron
Memory Category DRAM Chip
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