IC DRAM 16GBIT PAR 200TFBGA
DRAM, 512M X 32BIT, -40 TO 125DEG C; DRAM Type:LPDDR4; DRAM Density:16Gbit; DRAM Memory Configuration:512M x 32bit; Clock Frequency:2.133GHz; Memory Case Style:TFBGA; No. of Pins:200Pins; Supply Voltage Nom:1.1V; Access Time:- RoHS Compliant: Yes
SDRAM - Mobile LPDDR4X Memory IC 16Gbit Parallel 2.133 GHz 3.5 ns 200-TFBGA (10x14.5)
| DigiKey | Newark, An Avnet Company | Quarktwin Technology Ltd. | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 557-MT53E512M32D2FW-046AUT:D-ND | 80AH8418 | MT53E512M32D2FW-046 AUT:D |
| Product Name | Memory | Dram, 512M X 32Bit, -40 To 125Deg C; Dram Type Micron | Memory |
| Memory Category | DRAM Chip | DRAM Chip | DRAM; DRAM Chip |
| Operating Temperature | -40 to 125 C (-40 to 257 F) | -40 to 125 C (-40 to 257 F) | |
| Package Type | 200-TFBGA | TFBGA | BGA; 200-TFBGA |
| Supply Voltage | 1.06V ~ 1.17V | 1.06V ~ 1.17V |
