MT53E4D1BSQ-DC TR -- MEMORY
Micron Technology, Inc.
Memory
MT53E4D1BSQ-DC TR
Description
SPECIAL/CUSTOM LPDDR4
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Lingto Electronic Limited
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Quarktwin Technology Ltd.
-
Shenzhen Shengyu Electronics Technology Limited
Description
SPECIAL/CUSTOM LPDDR4
Technical Specifications
|
Product Category
|
Memory Chips |
Memory Chips |
Memory Chips |
|
Product Number
|
MT53E4D1BSQ-DC TR |
MT53E4D1BSQ-DC TR |
MT53E4D1BSQ-DC TR |
|
Product Name
|
Memory |
Memory |
Integrated Circuits (ICs) - Memory |
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Memory Category
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Cycle Time
70 ns
Density
8 kbits
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2 suppliers
Operating Temperature
0 to 115 C (32 to 239 F)
Package Type
QFP; Tray
Supply Voltage
3.135V ~ 3.465V
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Memory Category
DRAM Chip
Access Time
20 ns
Number of Words
64000 k
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Memory Category
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Access Time
150 to 250 ns
Operating Temperature
-55 to 125 C (-67 to 257 F)
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