SDRAM - Mobile LPDDR4X Memory IC 12Gb (384M x 32) Parallel 1.066GHz 3.5ns 200-TFBGA (10x14.5)
IC DRAM
SDRAM - Mobile LPDDR4X Memory IC 12Gbit Parallel 1.066 GHz 3.5 ns 200-TFBGA (10x14.5)
DRAM, 384M X 32BIT, -40 TO 105DEG C; DRAM Type:LPDDR4; DRAM Density:12Gbit; DRAM Memory Configuration:384M x 32bit; Clock Frequency:2.133GHz; Memory Case Style:TFBGA; No. of Pins:200Pins; Supply Voltage Nom:1.1V; Access Time:- RoHS Compliant: Yes
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 557-MT53E384M32D2FW-046AAT:E-ND | MT53E384M32D2FW-046 AAT:E | MT53E384M32D2FW-046 AAT:E | 80AH8391 |
| Product Name | Memory | Integrated Circuits (ICs) - Memory | Memory | Dram, 384M X 32Bit, -40 To 105Deg C; Dram Type Micron |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM Chip |
| Operating Temperature | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | |
| Package Type | 200-TFBGA | BGA | BGA; 200-TFBGA | TFBGA |
| Supply Voltage | 1.06V ~ 1.17V | 1.06V ~ 1.17V | 1.06V ~ 1.17V |
