Category: Integrated Circuits (ICs)>Memory
Series: Automotive, AEC-Q100
Package: Tray
Standard Package: 1,360
Mounting: SMD (SMT)
Technology: SDRAM - Mobile LPDDR4
Memory Type: Volatile
Memory Size: 12Gb (384M x 32)
Voltage - Supply: 1.1V
Package / Case: 200-WFBGA
Supplier Device Package: 200-WFBGA (10x14.5)
Temperature Range - Operating: -40°C ~ 105°C (TC)
Memory Format: DRAM
Clock Frequency: 1.866 GHz
Alternative Parts (Cross-Reference): MT53E384M32D2DS-053A
ECCN: EAR99
Fake Threat In the Open Market: 75 pct.
MSL Level: 3 (168 Hours)
HTSUS: 8542.32.0036
Mfr: Micron Technology Inc.
Base Product Number: MT53E384
SDRAM - Mobile LPDDR4 Memory IC 12Gb (384M x 32) 1.866GHz 200-WFBGA (10x14.5)
IC DRAM 12GBIT 1.866GHZ 200WFBGA Product overview: MT53E384M32D2DS-053 AAT:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.866GHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1.866GHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT53E384M32D2DS-
DRAM, 384M X 32BIT, -40 TO 105DEG C; DRAM Type:LPDDR4; DRAM Density:12Gbit; DRAM Memory Configuration:384M x 32bit; Clock Frequency:1.866GHz; Memory Case Style:WFBGA; No. of Pins:200Pins; Supply Voltage Nom:1.1V; Access Time:- RoHS Compliant: Yes
SDRAM - Mobile LPDDR4 Memory IC 12Gbit 1.866 GHz 200-WFBGA (10x14.5)
IC DRAM 12GBIT 1.866GHZ 200WFBGA
IC DRAM 12GBIT 1.866GHZ 200WFBGA
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT53E384M32D2DS-053AAT:E-ND | 774-MT53E384M32D2DS-053 AAT:E | 80AH8387 | MT53E384M32D2DS-053 AAT:E | MT53E384M32D2DS-053 AAT:E | MT53E384M32D2DS-053 AAT:E | |
| Product Name | Integrated Circuits (ICs) - Memory | Memory | 1.866GHZ Memory IC and Storage Component | Dram, 384M X 32Bit, -40 To 105Deg C; Dram Type Micron | Memory | Integrated Circuits (ICs) - Memory | Memory |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Operating Temperature | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | ||
| Supply Voltage | 1.1V | 1.1V | 1.1V | 1.1V | |||
| Package Type | 200-WFBGA | BGA; Tray | WFBGA | BGA; 200-WFBGA | BGA | ||
| Access Time | 3.5 ns |
