Micron Technology, Inc. Memory - DDR - MT53E2G32D8QD-046 WT:E MT53E2G32D8QD-046 WT:E

Description
Series: * Categories: Memory
Request a Quote
Description
Series: * Categories: Memory
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Memory - DDR - MT53E2G32D8QD-046 WT:E -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - DDR - MT53E2G32D8QD-046 WT:E
Memory - DDR - MT53E2G32D8QD-046 WT:E
Series: * Categories: Memory

Series: *
Categories: Memory

Buy Now
2.133GHZ Memory IC and Storage Component - 774-MT53E2G32D8QD-046 WT:E - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
2.133GHZ Memory IC and Storage Component
774-MT53E2G32D8QD-046 WT:E
2.133GHZ Memory IC and Storage Component 774-MT53E2G32D8QD-046 WT:E
IC DRAM 64GBIT 2.133GHZ FBGA Product overview: MT53E2G32D8QD-046 WT:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2.133GHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 2.133GHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT53E2G32D8QD-04 6 WT:E can be used for catalog matching and distributor lookup.

IC DRAM 64GBIT 2.133GHZ FBGA Product overview: MT53E2G32D8QD-046 WT:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2.133GHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 2.133GHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT53E2G32D8QD-046 WT:E can be used for catalog matching and distributor lookup.

Supplier's Site
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53E2G32D8QD-046 WT:E
Integrated Circuits (ICs) - Memory - Memory MT53E2G32D8QD-046 WT:E
IC DRAM 64GBIT 2.133GHZ FBGA

IC DRAM 64GBIT 2.133GHZ FBGA

Supplier's Site
SDRAM - Mobile LPDDR4 Memory IC 64Gbit 2.133 GHz

SDRAM - Mobile LPDDR4 Memory IC 64Gbit 2.133 GHz

Buy Now
Lpddr464G2Gx32Fbgawt8Dp, Tray Micron - 80AH8349 - Newark, An Avnet Company
Chicago, IL, United States
Lpddr464G2Gx32Fbgawt8Dp, Tray Micron
80AH8349
Lpddr464G2Gx32Fbgawt8Dp, Tray Micron 80AH8349
LPDDR464G2GX32FBGAWT 8DP, TRAY

LPDDR464G2GX32FBGAWT8DP, TRAY

Supplier's Site
LPDDR4 64G 2GX32 FBGA WT 8DP

LPDDR4 64G 2GX32 FBGA WT 8DP

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Newark, An Avnet Company Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 774-MT53E2G32D8QD-046 WT:E MT53E2G32D8QD-046 WT:E MT53E2G32D8QD-046 WT:E 80AH8349 MT53E2G32D8QD-046 WT:E
Product Name Memory - DDR - MT53E2G32D8QD-046 WT:E 2.133GHZ Memory IC and Storage Component Integrated Circuits (ICs) - Memory - Memory Memory Lpddr464G2Gx32Fbgawt8Dp, Tray Micron Memory
Memory Category Volatile; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -30 to 85 C (-22 to 185 F) -30 to 85 C (-22 to 185 F)
Package Type Box
Unlock Full Specs
to access all available technical data

Similar Products

Memory - SMJ44C256 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 8611200826 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers