MT53E2D1BCY-DC TR -- MEMORY
Micron Technology, Inc.
Memory
MT53E2D1BCY-DC TR
Description
SPECIAL/CUSTOM LPDDR4
-
Lingto Electronic Limited
-
Shenzhen Shengyu Electronics Technology Limited
-
Quarktwin Technology Ltd.
Description
SPECIAL/CUSTOM LPDDR4
Technical Specifications
|
Product Category
|
Memory Chips |
Memory Chips |
Memory Chips |
|
Product Number
|
MT53E2D1BCY-DC TR |
MT53E2D1BCY-DC TR |
MT53E2D1BCY-DC TR |
|
Product Name
|
Memory |
Integrated Circuits (ICs) - Memory |
Memory |
Unlock Full Specs
to access all available technical data
Similar Products
Memory Category
DRAM Chip
Access Time
5 ns
Bits per Word
8 bits
View Details
Memory Category
FLASH
Access Time
70 to 120 ns
Operating Temperature
-55 to 125 C (-67 to 257 F)
View Details
Memory Category
NVSRAM (Non-Volatile SRAM); SRAM Chip
Access Time
55 ns
Operating Temperature
-55 to 125 C (-67 to 257 F)
View Details
Memory Category
PROM; PROM
Access Time
65 ns
Operating Temperature
-55 to 125 C (-67 to 257 F)
View Details
2 suppliers