Series: *
Categories: Memory
SDRAM - Mobile LPDDR4 Memory IC 8Gb (256M x 32) 1.866GHz 200-WFBGA (10x14.5)
IC DRAM 8GBIT 1.866GHZ 200WFBGA Product overview: MT53E256M32D2DS-053 WT:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.866GHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1.866GHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT53E256M32D2DS-
IC DRAM 8GBIT 1.866GHZ 200WFBGA
SDRAM - Mobile LPDDR4 Memory IC 8Gbit 1.866 GHz 200-WFBGA (10x14.5)
IC DRAM 8GBIT 1.866GHZ 200WFBGA
IC DRAM 8GBIT 1.866GHZ 200WFBGA
DRAM, 256M X 32BIT, -30 TO 85DEG C ROHS COMPLIANT: YES
DRAMLPDDR4256MX32WFB
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT53E256M32D2DS-053WT:B-ND | 774-MT53E256M32D2DS-053 WT:B | MT53E256M32D2DS-053 WT:B | MT53E256M32D2DS-053 WT:B | MT53E256M32D2DS-053 WT:B | MT53E256M32D2DS-053 WT:B | 32AJ7547 | |
| Product Name | Memory - DDR - MT53E256M32D2DS-053 WT:B | Memory | 1.866GHZ Memory IC and Storage Component | Memory | Memory | Integrated Circuits (ICs) - Memory | Memory | Dram, 256M X 32Bit, -30 To 85Deg C Rohs Compliant Micron |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | SDRAM - Mobile LPDDR4; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM Chip | |
| Operating Temperature | -30 to 85 C (-22 to 185 F) | -30 to 85 C (-22 to 185 F) | -30 to 85 C (-22 to 185 F) | -30 to 85 C (-22 to 185 F) | -30 to 85 C (-22 to 185 F) | |||
| Package Type | 200-WFBGA | BGA; Tray | 200-WFBGA | BGA; 200-WFBGA | BGA | |||
| Density | 8000000 kbits | 8000000 kbits | 8000000 kbits | 8000000 kbits | 8000000 kbits | |||
| Number of Words | 32000 k |
