IC DRAM 8GBIT 1.866GHZ 200WFBGA Product overview: MT53E256M32D2DS-053 AUT:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.866GHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1.866GHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT53E256M32D2DS-
Manufacturer: Micron Technology Inc.
Series: Automotive, AEC-Q100
Operating Temperature Range: -40°C ~ 125°C (TC)
Features: SDRAM - Mobile LPDDR4 Memory IC 8Gb (256M x 32) - 200-WFBGA (10x14.5)
Package: 200-WFBGA
Package: Tray
Mounting: Surface Mount
Family Name: MT53E256
Categories: Integrated Circuits (ICs)
Case / Package: 200-WFBGA (10x14.5)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
Quantity per package: 1360
MSL Level: 3 (168 Hours)
Estimated Pruduction Lead Time: 35 Weeks
HTSUS: 8542.32.0036
SDRAM - Mobile LPDDR4 Memory IC 8Gbit 1.866 GHz 200-WFBGA (10x14.5)
IC DRAM 8GBIT 1.866GHZ 200WFBGA
DRAM, 256M X 32BIT, -40 TO 125DEG C; DRAM Type:LPDDR4; DRAM Density:8Gbit; DRAM Memory Configuration:256M x 32bit; Clock Frequency:1.866GHz; Memory Case Style:WFBGA; No. of Pins:200Pins; Supply Voltage Nom:1.1V; Access Time:535ps RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Quarktwin Technology Ltd. | Lingto Electronic Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT53E256M32D2DS-053 AUT:B | MT53E256M32D2DS-053 AUT:B | MT53E256M32D2DS-053 AUT:B | 80AH8367 | |
| Product Name | 1.866GHZ Memory IC and Storage Component | Memory - SDRAM - MT53E256M32D2DS-053 AUT:B | Memory | Memory | Dram, 256M X 32Bit, -40 To 125Deg C; Dram Type Micron |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | DRAM Chip |
| Access Time | 3.5 ns | 0.5350 ns | |||
| Operating Temperature | -40 to 125 C (-40 to 257 F) | -40 to 125 C (-40 to 257 F) | -40 to 125 C (-40 to 257 F) | ||
| Address Bus Width | 32 bits | ||||
| Package Type | BGA; Tray | BGA; 200-WFBGA (10x14.5) | BGA; 200-WFBGA | WFBGA |
