IC DRAM 8GBIT 1.866GHZ 200WFBGA Product overview: MT53E256M32D2DS-053 AIT:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.866GHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1.866GHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT53E256M32D2DS-
Series: *
Categories: Memory
IC DRAM 8GBIT 1.866GHZ 200WFBGA
DRAM, 256M X 32BIT, -40 TO 95DEG C; DRAM Type:LPDDR4; DRAM Density:8Gbit; DRAM Memory Configuration:256M x 32bit; Clock Frequency:1.866GHz; Memory Case Style:WFBGA; No. of Pins:200Pins; Supply Voltage Nom:1.1V; Access Time:535ps RoHS Compliant: Yes
SDRAM - Mobile LPDDR4 Memory IC 8Gbit 1.866 GHz 200-WFBGA (10x14.5)
IC DRAM 8GBIT 1.866GHZ 200WFBGA
IC DRAM 8GBIT 1.866GHZ 200WFBGA
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT53E256M32D2DS-053 AIT:B | MT53E256M32D2DS-053 AIT:B | 83AH2737 | MT53E256M32D2DS-053 AIT:B | MT53E256M32D2DS-053 AIT:B | MT53E256M32D2DS-053 AIT:B | |
| Product Name | 1.866GHZ Memory IC and Storage Component | Memory - DDR - MT53E256M32D2DS-053 AIT:B | Memory | Dram, 256M X 32Bit, -40 To 95Deg C; Dram Type Micron | Memory | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | Volatile; DRAM Chip | SDRAM - Mobile LPDDR4; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | |
| Access Time | 3.5 ns | 0.5350 ns | |||||
| Operating Temperature | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | |||
| Density | 8000000 kbits | 8000000 kbits | 8000000 kbits | 8000000 kbits | 8000000 kbits | 8000000 kbits | |
| Address Bus Width | 32 bits |
