Manufacturer: Micron Technology Inc.
Series: Automotive, AEC-Q100
Operating Temperature Range: -40°C ~ 105°C (TC)
Features: SDRAM - Mobile LPDDR4 Memory IC 8Gb (256M x 32) - 1.866 GHz 200-WFBGA (10x14.5)
Package: 200-WFBGA
Package: Tray
Mounting: Surface Mount
Family Name: MT53E256
Categories: Integrated Circuits (ICs)
Case / Package: 200-WFBGA (10x14.5)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
Quantity per package: 1360
MSL Level: 3 (168 Hours)
Estimated Pruduction Lead Time: 35 Weeks
HTSUS: 8542.32.0036
IC DRAM 8GBIT 1.866GHZ 200WFBGA
IC DRAM 8GBIT 1.866GHZ 200WFBGA Product overview: MT53E256M32D2DS-053 AAT:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.866GHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1.866GHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT53E256M32D2DS-
IC DRAM 8GBIT 1.866GHZ 200WFBGA
IC DRAM 8GBIT 1.866GHZ 200WFBGA
SDRAM - Mobile LPDDR4 Memory IC 8Gbit 1.866 GHz 200-WFBGA (10x14.5)
DRAM, 256M X 32BIT, -40 TO 105DEG C; DRAM Type:LPDDR4; DRAM Density:8Gbit; DRAM Memory Configuration:256M x 32bit; Clock Frequency:1.866GHz; Memory Case Style:WFBGA; No. of Pins:200Pins; Supply Voltage Nom:1.1V; Access Time:535ps RoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT53E256M32D2DS-053 AAT:B | 774-MT53E256M32D2DS-053 AAT:B | MT53E256M32D2DS-053 AAT:B | MT53E256M32D2DS-053 AAT:B | MT53E256M32D2DS-053 AAT:B | 80AH8365 | |
| Product Name | Memory - SDRAM - MT53E256M32D2DS-053 AAT:B | Memory | 1.866GHZ Memory IC and Storage Component | Memory | Integrated Circuits (ICs) - Memory | Memory | Dram, 256M X 32Bit, -40 To 105Deg C; Dram Type Micron |
| Memory Category | DRAM Chip | SDRAM - Mobile LPDDR4; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM Chip |
| Operating Temperature | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | ||
| Package Type | BGA; 200-WFBGA (10x14.5) | 200-WFBGA | BGA; Tray | BGA | BGA; 200-WFBGA | WFBGA | |
| Data Rate | 1866 MHz | 1866 MHz | 1866 MHz | ||||
| Density | 8000000 kbits | 8000000 kbits | 8000000 kbits | 8000000 kbits | 8000000 kbits |
