Micron Technology, Inc. Memory MT53E256M16D1DS-046 WT:B

Description
IC DRAM LPDDR4 WFBGA
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Description
IC DRAM LPDDR4 WFBGA
Request a Quote Datasheet

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IC DRAM LPDDR4 WFBGA

IC DRAM LPDDR4 WFBGA

Supplier's Site
2.133GHZ Memory IC and Storage Component - 774-MT53E256M16D1DS-046 WT:B - ERSAELECTRONICS PTE. LTD.
Singapore
2.133GHZ Memory IC and Storage Component
774-MT53E256M16D1DS-046 WT:B
2.133GHZ Memory IC and Storage Component 774-MT53E256M16D1DS-046 WT:B
IC DRAM 4GBIT 2.133GHZ WFBGA Product overview: MT53E256M16D1DS-046 WT:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2.133GHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 2.133GHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT53E256M16D1DS- 046 WT:B can be used for catalog matching and distributor lookup.

IC DRAM 4GBIT 2.133GHZ WFBGA Product overview: MT53E256M16D1DS-046 WT:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2.133GHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 2.133GHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT53E256M16D1DS-046 WT:B can be used for catalog matching and distributor lookup.

Supplier's Site
Memory - SDRAM - MT53E256M16D1DS-046 WT:B -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT53E256M16D1DS-046 WT:B
Memory - SDRAM - MT53E256M16D1DS-046 WT:B
Manufacturer: Micron Technology Inc. Operating Temperature Range: -30°C ~ 85°C (TC) Features: SDRAM - Mobile LPDDR4 Memory IC 4Gb (256M x 16) Package: Tray Family Name: MT53E256 Categories: Integrated Circuits (ICs) Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Quantity per package: 1360 MSL Level: 3 (168 Hours) Estimated Pruduction Lead Time: 35 Weeks

Manufacturer: Micron Technology Inc.
Operating Temperature Range: -30°C ~ 85°C (TC)
Features: SDRAM - Mobile LPDDR4 Memory IC 4Gb (256M x 16)
Package: Tray
Family Name: MT53E256
Categories: Integrated Circuits (ICs)
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Quantity per package: 1360
MSL Level: 3 (168 Hours)
Estimated Pruduction Lead Time: 35 Weeks

Buy Now
Memory - MT53E256M16D1DS-046WT:B-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPDDR4 Memory IC 4Gb (256M x 16) 2.133GHz

SDRAM - Mobile LPDDR4 Memory IC 4Gb (256M x 16) 2.133GHz

Buy Now Datasheet
IC DRAM LPDDR4 WFBGA

IC DRAM LPDDR4 WFBGA

Supplier's Site
SDRAM - Mobile LPDDR4 Memory IC 4Gbit 2.133 GHz 200-WFBGA (10x14.5)

SDRAM - Mobile LPDDR4 Memory IC 4Gbit 2.133 GHz 200-WFBGA (10x14.5)

Buy Now Datasheet
Dram, 256M X 16Bit, -30 To 85Deg C; Dram Type Micron - 80AH8352 - Newark, An Avnet Company
Chicago, IL, United States
Dram, 256M X 16Bit, -30 To 85Deg C; Dram Type Micron
80AH8352
Dram, 256M X 16Bit, -30 To 85Deg C; Dram Type Micron 80AH8352
DRAM, 256M X 16BIT, -30 TO 85DEG C; DRAM Type:LPDDR4; DRAM Density:4Gbit; DRAM Memory Configuration:256M x 16bit; Clock Frequency:2.133GHz; Memory Case Style:WFBGA; No. of Pins:200Pins; Supply Voltage Nom:1.1V; Access Time:- RoHS Compliant: Yes

DRAM, 256M X 16BIT, -30 TO 85DEG C; DRAM Type:LPDDR4; DRAM Density:4Gbit; DRAM Memory Configuration:256M x 16bit; Clock Frequency:2.133GHz; Memory Case Style:WFBGA; No. of Pins:200Pins; Supply Voltage Nom:1.1V; Access Time:- RoHS Compliant: Yes

Supplier's Site
Integrated Circuits (ICs) - Memory MT53E256M16D1DS-046 WT:B
IC DRAM LPDDR4 WFBGA

IC DRAM LPDDR4 WFBGA

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT53E256M16D1DS-046 WT:B 774-MT53E256M16D1DS-046 WT:B MT53E256M16D1DS-046WT:B-ND MT53E256M16D1DS-046 WT:B MT53E256M16D1DS-046 WT:B 80AH8352 MT53E256M16D1DS-046 WT:B
Product Name Memory 2.133GHZ Memory IC and Storage Component Memory - SDRAM - MT53E256M16D1DS-046 WT:B Memory Memory Memory Dram, 256M X 16Bit, -30 To 85Deg C; Dram Type Micron Integrated Circuits (ICs) - Memory
Memory Category SDRAM - Mobile LPDDR4; DRAM Chip Volatile; DRAM Chip DRAM Chip DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip DRAM Chip Volatile; DRAM Chip
Data Rate 2133 MHz 2133 MHz 2133 MHz
Operating Temperature -30 to 85 C (-22 to 185 F) -30 to 85 C (-22 to 185 F) -30 to 85 C (-22 to 185 F) -30 to 85 C (-22 to 185 F) -30 to 85 C (-22 to 185 F) -30 to 85 C (-22 to 185 F)
Density 4000000 kbits 4000000 kbits 4000000 kbits 4000000 kbits 4000000 kbits 4000000 kbits
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