IC DRAM 4GBIT 2.133GHZ WFBGA Product overview: MT53E256M16D1DS-046 WT:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2.133GHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 2.133GHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT53E256M16D1DS-
Manufacturer: Micron Technology Inc.
Operating Temperature Range: -30°C ~ 85°C (TC)
Features: SDRAM - Mobile LPDDR4 Memory IC 4Gb (256M x 16)
Package: Tray
Family Name: MT53E256
Categories: Integrated Circuits (ICs)
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Quantity per package: 1360
MSL Level: 3 (168 Hours)
Estimated Pruduction Lead Time: 35 Weeks
SDRAM - Mobile LPDDR4 Memory IC 4Gb (256M x 16) 2.133GHz
SDRAM - Mobile LPDDR4 Memory IC 4Gbit 2.133 GHz 200-WFBGA (10x14.5)
DRAM, 256M X 16BIT, -30 TO 85DEG C; DRAM Type:LPDDR4; DRAM Density:4Gbit; DRAM Memory Configuration:256M x 16bit; Clock Frequency:2.133GHz; Memory Case Style:WFBGA; No. of Pins:200Pins; Supply Voltage Nom:1.1V; Access Time:- RoHS Compliant: Yes
IC DRAM LPDDR4 WFBGA
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Lingto Electronic Limited | Quarktwin Technology Ltd. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT53E256M16D1DS-046 WT:B | 774-MT53E256M16D1DS-046 WT:B | MT53E256M16D1DS-046WT:B-ND | MT53E256M16D1DS-046 WT:B | MT53E256M16D1DS-046 WT:B | 80AH8352 | MT53E256M16D1DS-046 WT:B | |
| Product Name | Memory | 2.133GHZ Memory IC and Storage Component | Memory - SDRAM - MT53E256M16D1DS-046 WT:B | Memory | Memory | Memory | Dram, 256M X 16Bit, -30 To 85Deg C; Dram Type Micron | Integrated Circuits (ICs) - Memory |
| Memory Category | SDRAM - Mobile LPDDR4; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | DRAM Chip | Volatile; DRAM Chip |
| Data Rate | 2133 MHz | 2133 MHz | 2133 MHz | |||||
| Operating Temperature | -30 to 85 C (-22 to 185 F) | -30 to 85 C (-22 to 185 F) | -30 to 85 C (-22 to 185 F) | -30 to 85 C (-22 to 185 F) | -30 to 85 C (-22 to 185 F) | -30 to 85 C (-22 to 185 F) | ||
| Density | 4000000 kbits | 4000000 kbits | 4000000 kbits | 4000000 kbits | 4000000 kbits | 4000000 kbits |
