Series: *
Categories: Memory
IC DRAM 4GBIT 1.866GHZ 200WFBGA Product overview: MT53E128M32D2DS-053 IT:A from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.866GHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1.866GHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT53E128M32D2DS-
SDRAM - Mobile LPDDR4 Memory IC 4Gb (128M x 32) 1.866GHz 200-WFBGA (10x14.5)
SDRAM - Mobile LPDDR4 Memory IC 4Gbit 1.866 GHz 200-WFBGA (10x14.5)
DRAM, 128M X 32BIT, -40 TO 95DEG C; DRAM Type:LPDDR4; DRAM Density:4Gbit; DRAM Memory Configuration:128M x 32bit; Clock Frequency:1.866GHz; Memory Case Style:WFBGA; No. of Pins:200Pins; Supply Voltage Nom:1.1V; Access Time:- RoHS Compliant: Yes
LPDDR4 4G 128MX32 WFBGA
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Quarktwin Technology Ltd. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT53E128M32D2DS-053 IT:A | 557-MT53E128M32D2DS-053IT:A-ND | MT53E128M32D2DS-053 IT:A | 80AH8316 | MT53E128M32D2DS-053 IT:A | MT53E128M32D2DS-053 IT:A | |
| Product Name | Memory - DDR - MT53E128M32D2DS-053 IT:A | 1.866GHZ Memory IC and Storage Component | Memory | Memory | Dram, 128M X 32Bit, -40 To 95Deg C; Dram Type Micron | Integrated Circuits (ICs) - Memory | Memory |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | |
| Access Time | 3.5 ns | ||||||
| Operating Temperature | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | |||
| Address Bus Width | 32 bits | ||||||
| Package Type | BGA; Bulk | 200-WFBGA | BGA; 200-WFBGA | WFBGA | BGA |
