IC LPDDR4 4G 128MX32 200WFBGA
IC DRAM 4GBIT 1.866GHZ 200WFBGA Product overview: MT53E128M32D2DS-053 AAT:A from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.866GHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1.866GHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT53E128M32D2DS-
Manufacturer: Micron Technology Inc.
Series: Automotive, AEC-Q100
Operating Temperature Range: -40°C ~ 105°C (TC)
Features: SDRAM - Mobile LPDDR4 Memory IC 4Gb (128M x 32) - 200-WFBGA (10x14.5)
Package: Tray
Package: 200-WFBGA
Mounting: Surface Mount
Family Name: MT53E128
Categories: Integrated Circuits (ICs)
Case / Package: 200-WFBGA (10x14.5)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
Quantity per package: 1360
MSL Level: 3 (168 Hours)
HTSUS: 8542.32.0036
SDRAM - Mobile LPDDR4 Memory IC 4Gb (128M x 32) 1.866GHz 200-WFBGA (10x14.5)
IC DRAM 4GBIT 1.866GHZ 200WFBGA
SDRAM - Mobile LPDDR4 Memory IC 4Gbit 1.866 GHz 200-WFBGA (10x14.5)
IC LPDDR4 4G 128MX32 200WFBGA
DRAM, 128M X 32BIT, -40 TO 105DEG C; DRAM Type:LPDDR4; DRAM Density:4Gbit; DRAM Memory Configuration:128M x 32bit; Clock Frequency:1.866GHz; Memory Case Style:WFBGA; No. of Pins:200Pins; Supply Voltage Nom:1.1V; Access Time:- RoHS Compliant: Yes
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT53E128M32D2DS-053 AAT:A | 774-MT53E128M32D2DS-053 AAT:A | MT53E128M32D2DS-053AAT:A-ND | MT53E128M32D2DS-053 AAT:A | MT53E128M32D2DS-053 AAT:A | MT53E128M32D2DS-053 AAT:A | 80AH8313 | |
| Product Name | Memory | 1.866GHZ Memory IC and Storage Component | Memory - DDR - MT53E128M32D2DS-053 AAT:A | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory | Dram, 128M X 32Bit, -40 To 105Deg C; Dram Type Micron |
| Memory Category | SDRAM - Mobile LPDDR4 | Volatile; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | DRAM Chip | |
| Data Rate | 1866 MHz | 1866 MHz | 1866 MHz | |||||
| Operating Temperature | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | |||
| Density | 4000000 kbits | 4000000 kbits | 4000000 kbits | 4000000 kbits | 4000000 kbits | |||
| Package Type | 200-WFBGA | BGA; Tray | BGA; 200-WFBGA (10x14.5) | 200-WFBGA | BGA | BGA; 200-WFBGA | WFBGA |
