Micron Technology, Inc. Memory MT53E128M32D2DS-046 WT:A TR

Description
SDRAM - Mobile LPDDR4 Memory IC 4Gb (128M x 32) 2.133GHz 200-WFBGA (10x14.5)
Request a Quote Datasheet
Description
SDRAM - Mobile LPDDR4 Memory IC 4Gb (128M x 32) 2.133GHz 200-WFBGA (10x14.5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT53E128M32D2DS-046WT:ATR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPDDR4 Memory IC 4Gb (128M x 32) 2.133GHz 200-WFBGA (10x14.5)

SDRAM - Mobile LPDDR4 Memory IC 4Gb (128M x 32) 2.133GHz 200-WFBGA (10x14.5)

Buy Now Datasheet
IC DRAM 4GBIT 2.133GHZ 200WFBGA

IC DRAM 4GBIT 2.133GHZ 200WFBGA

Supplier's Site
Integrated Circuits (ICs) - Memory MT53E128M32D2DS-046 WT:A TR
IC DRAM 4GBIT 2.133GHZ 200WFBGA

IC DRAM 4GBIT 2.133GHZ 200WFBGA

Supplier's Site
SDRAM - Mobile LPDDR4 Memory IC 4Gbit 2.133 GHz 200-WFBGA (10x14.5)

SDRAM - Mobile LPDDR4 Memory IC 4Gbit 2.133 GHz 200-WFBGA (10x14.5)

Buy Now

Technical Specifications

  DigiKey Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT53E128M32D2DS-046WT:ATR-ND MT53E128M32D2DS-046 WT:A TR MT53E128M32D2DS-046 WT:A TR MT53E128M32D2DS-046 WT:A TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -30 to 85 C (-22 to 185 F) -30 to 85 C (-22 to 185 F) -30 to 85 C (-22 to 185 F)
Package Type 200-WFBGA BGA BGA; 200-WFBGA
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 2420769 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 128000 k
View Details
SOIC Memory IC and Storage Component - 736-BQ2201SN-NTR - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category SRAM Chip
Operating Temperature -40 C (-40 F)
Package Type D
View Details
5 suppliers
Memory - 24C02A-E/P - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 3500 ns
Density 2 kbits
View Details
Memory - AS58C1001 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 150 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details