Micron Technology, Inc. Integrated Circuits (ICs) - Memory MT53E128M32D2DS-046 AIT:A TR

Description
IC DRAM 4GBIT 2.133GHZ 200WFBGA
Description
IC DRAM 4GBIT 2.133GHZ 200WFBGA

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory MT53E128M32D2DS-046 AIT:A TR
IC DRAM 4GBIT 2.133GHZ 200WFBGA

IC DRAM 4GBIT 2.133GHZ 200WFBGA

Supplier's Site
SDRAM - Mobile LPDDR4 Memory IC 4Gbit 2.133 GHz 200-WFBGA (10x14.5)

SDRAM - Mobile LPDDR4 Memory IC 4Gbit 2.133 GHz 200-WFBGA (10x14.5)

Buy Now
IC DRAM 4GBIT 2.133GHZ 200WFBGA

IC DRAM 4GBIT 2.133GHZ 200WFBGA

Supplier's Site

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53E128M32D2DS-046 AIT:A TR MT53E128M32D2DS-046 AIT:A TR MT53E128M32D2DS-046 AIT:A TR
Product Name Integrated Circuits (ICs) - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 2133 MHz
Operating Temperature -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 93Z451LMQB - Quarktwin Technology Ltd.
Texas Instruments
Specs
Memory Category PROM; PROM
Access Time 55 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
2 suppliers
Memory - 5962-8961415QXA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 45 ns
Density 1000 kbits
View Details
Memory - A2C00040269 A - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
SDRAM - 2420773P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 64000 k
View Details