SDRAM - Mobile LPDDR4 Memory IC 4Gb (128M x 32) 2.133GHz 200-WFBGA (10x14.5)
IC DRAM 4GBIT 2.133GHZ 200WFBGA Product overview: MT53E128M32D2DS-046 AAT:A from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2.133GHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 2.133GHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT53E128M32D2DS-
Manufacturer: Micron Technology Inc.
Series: Automotive, AEC-Q100
Operating Temperature Range: -40°C ~ 105°C (TC)
Features: SDRAM - Mobile LPDDR4 Memory IC 4Gb (128M x 32) - 200-WFBGA (10x14.5)
Package: 200-WFBGA
Package: Tray
Mounting: Surface Mount
Family Name: MT53E128
Categories: Integrated Circuits (ICs)
Case / Package: 200-WFBGA (10x14.5)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Quantity per package: 1360
MSL Level: 3 (168 Hours)
Estimated Pruduction Lead Time: 35 Weeks
HTSUS: 8542.32.0036
IC DRAM 4GBIT 2.133GHZ 200WFBGA
SDRAM - Mobile LPDDR4 Memory IC 4Gbit 2.133 GHz 200-WFBGA (10x14.5)
IC DRAM 4GBIT 2.133GHZ 200WFBGA
DRAM, 128M X 32BIT, -40 TO 105DEG C; DRAM Type:LPDDR4; DRAM Density:4Gbit; DRAM Memory Configuration:128M x 32bit; Clock Frequency:2.133GHz; Memory Case Style:WFBGA; No. of Pins:200Pins; Supply Voltage Nom:1.1V; Access Time:- RoHS Compliant: Yes
IC DRAM 4GBIT 2.133GHZ 200WFBGA
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | ODG (Origin Data Global) | Newark, An Avnet Company | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT53E128M32D2DS-046AAT:A-ND | 774-MT53E128M32D2DS-046 AAT:A | MT53E128M32D2DS-046 AAT:A | MT53E128M32D2DS-046 AAT:A | MT53E128M32D2DS-046 AAT:A | 80AH8309 | MT53E128M32D2DS-046 AAT:A | |
| Product Name | Memory | 2.133GHZ Memory IC and Storage Component | Memory - SDRAM - MT53E128M32D2DS-046 AAT:A | Integrated Circuits (ICs) - Memory | Memory | Memory | Dram, 128M X 32Bit, -40 To 105Deg C; Dram Type Micron | Memory |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | SDRAM - Mobile LPDDR4; DRAM Chip | DRAM Chip | DRAM; DRAM Chip |
| Operating Temperature | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | ||
| Package Type | 200-WFBGA | BGA; Tray | BGA; 200-WFBGA (10x14.5) | BGA | BGA; 200-WFBGA | 200-WFBGA | WFBGA | |
| Access Time | 3.5 ns | |||||||
| Density | 4000000 kbits | 4000000 kbits | 4000000 kbits | 4000000 kbits | 4000000 kbits | 4000000 kbits |
