Micron Technology, Inc. Memory MT53E128M16D1DS-053 IT:A TR

Description
SDRAM - Mobile LPDDR4 Memory IC 2Gbit Parallel 1.866 GHz 200-WFBGA (10x14.5)
Description
SDRAM - Mobile LPDDR4 Memory IC 2Gbit Parallel 1.866 GHz 200-WFBGA (10x14.5)

Suppliers

Company
Product
Description
Supplier Links
SDRAM - Mobile LPDDR4 Memory IC 2Gbit Parallel 1.866 GHz 200-WFBGA (10x14.5)

SDRAM - Mobile LPDDR4 Memory IC 2Gbit Parallel 1.866 GHz 200-WFBGA (10x14.5)

Buy Now
IC DRAM LPDDR4 WFBGA

IC DRAM LPDDR4 WFBGA

Supplier's Site
Integrated Circuits (ICs) - Memory MT53E128M16D1DS-053 IT:A TR
IC DRAM LPDDR4 WFBGA

IC DRAM LPDDR4 WFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53E128M16D1DS-053 IT:A TR MT53E128M16D1DS-053 IT:A TR MT53E128M16D1DS-053 IT:A TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F)
Density 2000000 kbits 2000000 kbits 2000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1712194 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Number of Words 512 k
Package Type SOIC
View Details
Memory - 9338PCQR - Quarktwin Technology Ltd.
Texas Instruments
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type DIP; 16-DIP (0.300\", 7.62mm)
Supply Voltage 4.75V ~ 5.25V
View Details
Memory - MT4C4001J - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details