DRAM, 128M X 16BIT, -25 TO 85DEG C; DRAM Type:LPDDR4; DRAM Density:2Gbit; DRAM Memory Configuration:128M x 16bit; Clock Frequency:2.133GHz; Memory Case Style:WFBGA; No. of Pins:200Pins; Supply Voltage Nom:1.1V; Access Time:- RoHS Compliant: Yes
IC DRAM LPDDR4 WFBGA
SDRAM - Mobile LPDDR4 Memory IC 2Gbit 2.133 GHz
| Newark, An Avnet Company | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 80AH8298 | MT53E128M16D1DS-046 WT:A | MT53E128M16D1DS-046 WT:A | MT53E128M16D1DS-046 WT:A |
| Product Name | Dram, 128M X 16Bit, -25 To 85Deg C; Dram Type Micron | Memory | Integrated Circuits (ICs) - Memory | Memory |
| Memory Category | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Data Rate | 2133 MHz | 2133 MHz | ||
| Density | 2000000 kbits | 2000000 kbits | 2000000 kbits | 2000000 kbits |
| Package Type | WFBGA |
