Micron Technology, Inc. DRAM MT53E128M16D1DS-046 AIT:A

Description
Category: DRAM Manufacturer: Micron Technology Inc.
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Description
Category: DRAM Manufacturer: Micron Technology Inc.
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
DRAM -  - Win Source Electronics
Laguna Hills, CA, United States
DRAM
DRAM
Category: DRAM Manufacturer: Micron Technology Inc.

Category: DRAM
Manufacturer: Micron Technology Inc.

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2.133GHZ Memory IC and Storage Component - 774-MT53E128M16D1DS-046 AIT:A - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
2.133GHZ Memory IC and Storage Component
774-MT53E128M16D1DS-046 AIT:A
2.133GHZ Memory IC and Storage Component 774-MT53E128M16D1DS-046 AIT:A
IC DRAM 2GBIT 2.133GHZ WFBGA Product overview: MT53E128M16D1DS-046 AIT:A from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2.133GHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 2.133GHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT53E128M16D1DS- 046 AIT:A can be used for catalog matching and distributor lookup.

IC DRAM 2GBIT 2.133GHZ WFBGA Product overview: MT53E128M16D1DS-046 AIT:A from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2.133GHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 2.133GHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT53E128M16D1DS-046 AIT:A can be used for catalog matching and distributor lookup.

Supplier's Site
SDRAM - Mobile LPDDR4 Memory IC 2Gbit 2.133 GHz

SDRAM - Mobile LPDDR4 Memory IC 2Gbit 2.133 GHz

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Dram, 128M X 16Bit, -40 To 95Deg C; Dram Type Micron - 80AH8297 - Newark, An Avnet Company
Chicago, IL, United States
Dram, 128M X 16Bit, -40 To 95Deg C; Dram Type Micron
80AH8297
Dram, 128M X 16Bit, -40 To 95Deg C; Dram Type Micron 80AH8297
DRAM, 128M X 16BIT, -40 TO 95DEG C; DRAM Type:LPDDR4; DRAM Density:2Gbit; DRAM Memory Configuration:128M x 16bit; Clock Frequency:-; Memory Case Style:VFBGA; No. of Pins:200Pins; Supply Voltage Nom:-; Access Time:-; Product Range:- RoHS Compliant: Yes

DRAM, 128M X 16BIT, -40 TO 95DEG C; DRAM Type:LPDDR4; DRAM Density:2Gbit; DRAM Memory Configuration:128M x 16bit; Clock Frequency:-; Memory Case Style:VFBGA; No. of Pins:200Pins; Supply Voltage Nom:-; Access Time:-; Product Range:- RoHS Compliant: Yes

Supplier's Site
IC DRAM LPDDR4 WFBGA

IC DRAM LPDDR4 WFBGA

Supplier's Site
Integrated Circuits (ICs) - Memory MT53E128M16D1DS-046 AIT:A
IC DRAM LPDDR4 WFBGA

IC DRAM LPDDR4 WFBGA

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Quarktwin Technology Ltd. Newark, An Avnet Company Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 774-MT53E128M16D1DS-046 AIT:A MT53E128M16D1DS-046 AIT:A 80AH8297 MT53E128M16D1DS-046 AIT:A MT53E128M16D1DS-046 AIT:A
Product Name DRAM 2.133GHZ Memory IC and Storage Component Memory Dram, 128M X 16Bit, -40 To 95Deg C; Dram Type Micron Memory Integrated Circuits (ICs) - Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F)
Package Type Tray VFBGA
Supply Voltage 1.1V 1.1V 1.1V
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