Micron Technology, Inc. Memory MT53D768M64D8SQ-053 WT ES:E TR

Description
IC DRAM 48GBIT 1866MHZ 556VFBGA
Description
IC DRAM 48GBIT 1866MHZ 556VFBGA

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Description
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IC DRAM 48GBIT 1866MHZ 556VFBGA

IC DRAM 48GBIT 1866MHZ 556VFBGA

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SDRAM - Mobile LPDDR4 Memory IC 48Gbit 1.866 GHz 556-VFBGA (12.4x12.4)

SDRAM - Mobile LPDDR4 Memory IC 48Gbit 1.866 GHz 556-VFBGA (12.4x12.4)

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Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53D768M64D8SQ-053 WT ES:E TR
Integrated Circuits (ICs) - Memory - Memory MT53D768M64D8SQ-053 WT ES:E TR
IC DRAM 48GBIT 1.866GHZ 556VFBGA

IC DRAM 48GBIT 1.866GHZ 556VFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53D768M64D8SQ-053 WT ES:E TR MT53D768M64D8SQ-053 WT ES:E TR MT53D768M64D8SQ-053 WT ES:E TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Density 48000000 kbits 48000000 kbits 48000000 kbits
Operating Temperature -30 to 85 C (-22 to 185 F)
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