Micron Technology, Inc. Memory MT53D512M64D8TZ-053 WT:B

Description
IC DRAM 32GBIT 1866MHZ
Description
IC DRAM 32GBIT 1866MHZ

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 32GBIT 1866MHZ

IC DRAM 32GBIT 1866MHZ

Supplier's Site
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53D512M64D8TZ-053 WT:B
Integrated Circuits (ICs) - Memory - Memory MT53D512M64D8TZ-053 WT:B
IC DRAM 32GBIT 1.866GHZ

IC DRAM 32GBIT 1.866GHZ

Supplier's Site
SDRAM - Mobile LPDDR4 Memory IC 32Gbit 1.866 GHz

SDRAM - Mobile LPDDR4 Memory IC 32Gbit 1.866 GHz

Buy Now

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53D512M64D8TZ-053 WT:B MT53D512M64D8TZ-053 WT:B MT53D512M64D8TZ-053 WT:B
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71124S12Y - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Density 1000 kbits
View Details
Memory - AS4DDR264M72 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR2
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 512000 kbits
View Details
Memory - JM38510/23104BFA - Quarktwin Technology Ltd.
View Details
2 suppliers
Memory - 2551483 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details