Micron Technology, Inc. Memory MT53D512M64D4SB-046 XT ES:E

Description
SDRAM - Mobile LPDDR4 Memory IC 32Gbit 2.133 GHz
  • Memory - MT53D512M64D4SB-046 XT ES:E - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Description
SDRAM - Mobile LPDDR4 Memory IC 32Gbit 2.133 GHz

Suppliers

Company
Product
Description
Supplier Links
Memory - MT53D512M64D4SB-046 XT ES:E - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT53D512M64D4SB-046 XT ES:E
Memory MT53D512M64D4SB-046 XT ES:E
SDRAM - Mobile LPDDR4 Memory IC 32Gbit 2.133 GHz

SDRAM - Mobile LPDDR4 Memory IC 32Gbit 2.133 GHz

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Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53D512M64D4SB-046 XT ES:E
Integrated Circuits (ICs) - Memory - Memory MT53D512M64D4SB-046 XT ES:E
IC DRAM 32GBIT 2.133GHZ FBGA

IC DRAM 32GBIT 2.133GHZ FBGA

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Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number MT53D512M64D4SB-046 XT ES:E MT53D512M64D4SB-046 XT ES:E
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip
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