Micron Technology, Inc. Memory MT53D512M64D4SB-046 XT:E

Description
IC DRAM 32GBIT 2133MHZ
Description
IC DRAM 32GBIT 2133MHZ

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 32GBIT 2133MHZ

IC DRAM 32GBIT 2133MHZ

Supplier's Site
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53D512M64D4SB-046 XT:E
Integrated Circuits (ICs) - Memory - Memory MT53D512M64D4SB-046 XT:E
IC DRAM 32GBIT 2.133GHZ

IC DRAM 32GBIT 2.133GHZ

Supplier's Site
SDRAM - Mobile LPDDR4 Memory IC 32Gbit 2.133 GHz

SDRAM - Mobile LPDDR4 Memory IC 32Gbit 2.133 GHz

Buy Now

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53D512M64D4SB-046 XT:E MT53D512M64D4SB-046 XT:E MT53D512M64D4SB-046 XT:E
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 27S185DM/B - Quarktwin Technology Ltd.
Rochester Electronics
View Details
2 suppliers
Memory - MT42C4256 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category NVRAM; VRAM
Access Time 100 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 28037126 A - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory IC and Storage Component - 774-NMC2148HJ-2 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category Volatile; SRAM Chip
Access Time 45 ns
Operating Temperature 0 to 70 C (32 to 158 F)
View Details
4 suppliers