Micron Technology, Inc. Memory MT53D512M64D4NZ-053 WT:D TR

Description
IC DRAM 32GBIT 1866MHZ 376WFBGA
Description
IC DRAM 32GBIT 1866MHZ 376WFBGA

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IC DRAM 32GBIT 1866MHZ 376WFBGA

IC DRAM 32GBIT 1866MHZ 376WFBGA

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SDRAM - Mobile LPDDR4 Memory IC 32Gbit 1.866 GHz 376-WFBGA (14x14)

SDRAM - Mobile LPDDR4 Memory IC 32Gbit 1.866 GHz 376-WFBGA (14x14)

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Integrated Circuits (ICs) - Memory - Memory - MT53D512M64D4NZ-053 WT:D TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53D512M64D4NZ-053 WT:D TR
Integrated Circuits (ICs) - Memory - Memory MT53D512M64D4NZ-053 WT:D TR
IC DRAM 32GBIT 1.866GHZ 376WFBGA

IC DRAM 32GBIT 1.866GHZ 376WFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53D512M64D4NZ-053 WT:D TR MT53D512M64D4NZ-053 WT:D TR MT53D512M64D4NZ-053 WT:D TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Density 32000000 kbits 32000000 kbits 32000000 kbits
Operating Temperature -30 to 85 C (-22 to 185 F)
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