Micron Technology, Inc. Memory MT53D512M64D4NZ-046 WT:E TR

Description
SDRAM - Mobile LPDDR4 Memory IC 32Gbit 2.133 GHz 376-WFBGA (14x14)
Description
SDRAM - Mobile LPDDR4 Memory IC 32Gbit 2.133 GHz 376-WFBGA (14x14)

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SDRAM - Mobile LPDDR4 Memory IC 32Gbit 2.133 GHz 376-WFBGA (14x14)

SDRAM - Mobile LPDDR4 Memory IC 32Gbit 2.133 GHz 376-WFBGA (14x14)

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Integrated Circuits (ICs) - Memory - Memory - MT53D512M64D4NZ-046 WT:E TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53D512M64D4NZ-046 WT:E TR
Integrated Circuits (ICs) - Memory - Memory MT53D512M64D4NZ-046 WT:E TR
IC DRAM 32GBIT 2.133GHZ 376WFBGA

IC DRAM 32GBIT 2.133GHZ 376WFBGA

Supplier's Site
IC DRAM 32GBIT 2133MHZ 376WFBGA

IC DRAM 32GBIT 2133MHZ 376WFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53D512M64D4NZ-046 WT:E TR MT53D512M64D4NZ-046 WT:E TR MT53D512M64D4NZ-046 WT:E TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -30 to 85 C (-22 to 185 F)
Density 32000000 kbits 32000000 kbits 32000000 kbits
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