Micron Technology, Inc. Memory MT53D512M64D4NY-046 XT ES:E

Description
SDRAM - Mobile LPDDR4 Memory IC 32Gbit 2.133 GHz
Description
SDRAM - Mobile LPDDR4 Memory IC 32Gbit 2.133 GHz

Suppliers

Company
Product
Description
Supplier Links
SDRAM - Mobile LPDDR4 Memory IC 32Gbit 2.133 GHz

SDRAM - Mobile LPDDR4 Memory IC 32Gbit 2.133 GHz

Buy Now
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53D512M64D4NY-046 XT ES:E
Integrated Circuits (ICs) - Memory - Memory MT53D512M64D4NY-046 XT ES:E
IC DRAM 32GBIT 2.133GHZ FBGA

IC DRAM 32GBIT 2.133GHZ FBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number MT53D512M64D4NY-046 XT ES:E MT53D512M64D4NY-046 XT ES:E
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 448-S27KL0642GABHB020-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category PSRAM
Operating Temperature -40 to 105 C (-40 to 221 F)
Density 64000 kbits
View Details
5 suppliers
Memory - SMJ418160 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 80 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882568 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details