Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT53D512M64D4NY-046 XT ES:E

Description
IC DRAM 32GBIT 2.133GHZ FBGA
Description
IC DRAM 32GBIT 2.133GHZ FBGA

Suppliers

Company
Product
Description
Supplier Links
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53D512M64D4NY-046 XT ES:E
Integrated Circuits (ICs) - Memory - Memory MT53D512M64D4NY-046 XT ES:E
IC DRAM 32GBIT 2.133GHZ FBGA

IC DRAM 32GBIT 2.133GHZ FBGA

Supplier's Site
SDRAM - Mobile LPDDR4 Memory IC 32Gbit 2.133 GHz

SDRAM - Mobile LPDDR4 Memory IC 32Gbit 2.133 GHz

Buy Now

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number MT53D512M64D4NY-046 XT ES:E MT53D512M64D4NY-046 XT ES:E
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory IC and Storage Component - 736-DP8429D-MSP - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type Bulk
View Details
3 suppliers
Flash Memory - 1882785 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details
Memory - AS5SP256K36 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SSRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 2048 kbits
View Details