Micron Technology, Inc. Memory MT53D512M64D4NW-053 WT ES:E

Description
IC DRAM 32GBIT 1866MHZ 432VFBGA
Description
IC DRAM 32GBIT 1866MHZ 432VFBGA

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IC DRAM 32GBIT 1866MHZ 432VFBGA

IC DRAM 32GBIT 1866MHZ 432VFBGA

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SDRAM - Mobile LPDDR4 Memory IC 32Gbit 1.866 GHz 432-VFBGA (15x15)

SDRAM - Mobile LPDDR4 Memory IC 32Gbit 1.866 GHz 432-VFBGA (15x15)

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Integrated Circuits (ICs) - Memory - Memory - MT53D512M64D4NW-053 WT ES:E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53D512M64D4NW-053 WT ES:E
Integrated Circuits (ICs) - Memory - Memory MT53D512M64D4NW-053 WT ES:E
IC DRAM 32GBIT 1.866GHZ 432VFBGA

IC DRAM 32GBIT 1.866GHZ 432VFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53D512M64D4NW-053 WT ES:E MT53D512M64D4NW-053 WT ES:E MT53D512M64D4NW-053 WT ES:E
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Density 32000000 kbits 32000000 kbits 32000000 kbits
Operating Temperature -30 to 85 C (-22 to 185 F)
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