Micron Technology, Inc. Memory MT53D512M64D4NW-053 WT ES:E

Description
SDRAM - Mobile LPDDR4 Memory IC 32Gbit 1.866 GHz 432-VFBGA (15x15)
Description
SDRAM - Mobile LPDDR4 Memory IC 32Gbit 1.866 GHz 432-VFBGA (15x15)

Suppliers

Company
Product
Description
Supplier Links
SDRAM - Mobile LPDDR4 Memory IC 32Gbit 1.866 GHz 432-VFBGA (15x15)

SDRAM - Mobile LPDDR4 Memory IC 32Gbit 1.866 GHz 432-VFBGA (15x15)

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT53D512M64D4NW-053 WT ES:E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53D512M64D4NW-053 WT ES:E
Integrated Circuits (ICs) - Memory - Memory MT53D512M64D4NW-053 WT ES:E
IC DRAM 32GBIT 1.866GHZ 432VFBGA

IC DRAM 32GBIT 1.866GHZ 432VFBGA

Supplier's Site
IC DRAM 32GBIT 1866MHZ 432VFBGA

IC DRAM 32GBIT 1866MHZ 432VFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53D512M64D4NW-053 WT ES:E MT53D512M64D4NW-053 WT ES:E MT53D512M64D4NW-053 WT ES:E
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -30 to 85 C (-22 to 185 F)
Density 32000000 kbits 32000000 kbits 32000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 1882600 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Bits per Word 8 bits
View Details
Memory - 93Z667DMQB65 - Quarktwin Technology Ltd.
Texas Instruments
Specs
Memory Category PROM; PROM
Access Time 65 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
2 suppliers
Memory - 27C256-20B/XA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 200 ns
Density 256 kbits
View Details