Micron Technology, Inc. Memory MT53D512M32D2NP-062 WT ES:D

Description
IC DRAM 16GBIT 1600MHZ 200WFBGA
Description
IC DRAM 16GBIT 1600MHZ 200WFBGA

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IC DRAM 16GBIT 1600MHZ 200WFBGA

IC DRAM 16GBIT 1600MHZ 200WFBGA

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SDRAM - Mobile LPDDR4 Memory IC 16Gbit 1.6 GHz 200-WFBGA (10x14.5)

SDRAM - Mobile LPDDR4 Memory IC 16Gbit 1.6 GHz 200-WFBGA (10x14.5)

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Integrated Circuits (ICs) - Memory - Memory - MT53D512M32D2NP-062 WT ES:D - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53D512M32D2NP-062 WT ES:D
Integrated Circuits (ICs) - Memory - Memory MT53D512M32D2NP-062 WT ES:D
IC DRAM 16GBIT 1.6GHZ 200WFBGA

IC DRAM 16GBIT 1.6GHZ 200WFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53D512M32D2NP-062 WT ES:D MT53D512M32D2NP-062 WT ES:D MT53D512M32D2NP-062 WT ES:D
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Density 16000000 kbits 16000000 kbits 16000000 kbits
Operating Temperature -30 to 85 C (-22 to 185 F)
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