IC DRAM 16GBIT 1.866GHZ 200WFBGA
Manufacturer: Micron Technology Inc.
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM - Mobile LPDDR4
Memory Type: Volatile
Memory Size: 16Gb (512M x 32)
Supplier Device Package: 200-WFBGA (10x14.5)
Temperature Range - Operating: -30°C ~ 85°C (TC)
Memory Format: DRAM
Clock Frequency: 1866MHz
Manufacturer Package: 200-WFBGA
Popularity: Low
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,360
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.1V
IC DRAM 16GBIT 1.866GHZ 200WFBGA Product overview: MT53D512M32D2DS-053 WT:D from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.866GHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1.866GHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT53D512M32D2DS-
IC DRAM 16GBIT 1866MHZ 200WFBGA
IC DRAM 16GBIT 1.866GHZ 200WFBGA
DRAM, 512M X 32BIT, -25 TO 85DEG C; DRAM Type:LPDDR4; DRAM Density:16Gbit; DRAM Memory Configuration:512M x 32bit; Clock Frequency:1.866GHz; Memory Case Style:WFBGA; No. of Pins:200Pins; Supply Voltage Nom:1.1V; Access Time:- RoHS Compliant: Yes
SDRAM - Mobile LPDDR4 Memory IC 16Gbit 1.866 GHz 200-WFBGA (10x14.5)
SDRAM - Mobile LPDDR4 Memory IC 16Gbit 1.866 GHz 200-WFBGA (10x14.5)
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Quarktwin Technology Ltd. | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT53D512M32D2DS-053 WT:D | 774-MT53D512M32D2DS-053 WT:D | MT53D512M32D2DS-053 WT:D | MT53D512M32D2DS-053 WT:D | 80AH8249 | MT53D512M32D2DS-053 WT:D | MT53D512M32D2DS-053 WT:D | |
| Product Name | Memory | Memory - SDRAM - MT53D512M32D2DS-053 WT:D | 1.866GHZ Memory IC and Storage Component | Memory | Integrated Circuits (ICs) - Memory - Memory | Dram, 512M X 32Bit, -25 To 85Deg C; Dram Type Micron | Memory | Memory |
| Memory Category | SDRAM - Mobile LPDDR4; DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Data Rate | 1866 MHz | 1866 MHz | 1866 MHz | |||||
| Operating Temperature | -30 to 85 C (-22 to 185 F) | -30 to 85 C (-22 to 185 F) | -30 to 85 C (-22 to 185 F) | -30 to 85 C (-22 to 185 F) | -40 to 85 C (-40 to 185 F) | |||
| Density | 16000000 kbits | 16000000 kbits | 16000000 kbits | 16000000 kbits | 16000000 kbits | 16000000 kbits | 16000000 kbits | |
| Package Type | 200-WFBGA | BGA; Tray | WFBGA | BGA; 200-WFBGA | BGA; 200-WFBGA |
