Micron Technology, Inc. Memory MT53D512M32D2DS-053 AAT:D TR

Description
IC DRAM 16GBIT 1866MHZ 200WFBGA
Description
IC DRAM 16GBIT 1866MHZ 200WFBGA

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IC DRAM 16GBIT 1866MHZ 200WFBGA

IC DRAM 16GBIT 1866MHZ 200WFBGA

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SDRAM - Mobile LPDDR4 Memory IC 16Gbit 1.866 GHz 200-WFBGA (10x14.5)

SDRAM - Mobile LPDDR4 Memory IC 16Gbit 1.866 GHz 200-WFBGA (10x14.5)

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Integrated Circuits (ICs) - Memory - Memory - MT53D512M32D2DS-053 AAT:D TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53D512M32D2DS-053 AAT:D TR
Integrated Circuits (ICs) - Memory - Memory MT53D512M32D2DS-053 AAT:D TR
IC DRAM 16GBIT 1.866GHZ 200WFBGA

IC DRAM 16GBIT 1.866GHZ 200WFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53D512M32D2DS-053 AAT:D TR MT53D512M32D2DS-053 AAT:D TR MT53D512M32D2DS-053 AAT:D TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Density 16000000 kbits 16000000 kbits 16000000 kbits
Operating Temperature -40 to 105 C (-40 to 221 F)
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