Series: *
Categories: Memory
IC DRAM 8GBIT 2.133GHZ 200WFBGA Product overview: MT53D512M16D1DS-046 AIT:D from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2.133GHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 2.133GHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT53D512M16D1DS-
SDRAM - Mobile LPDDR4 Memory IC 8Gb (512M x 16) 2.133GHz 200-WFBGA (10x14.5)
SDRAM - Mobile LPDDR4 Memory IC 8Gbit 2.133 GHz 200-WFBGA (10x14.5)
IC DRAM 8GBIT 2.133GHZ 200WFBGA
IC DRAM 8GBIT 2.133GHZ 200WFBGA
DRAM, 512M X 16BIT, -40 TO 95DEG C; DRAM Type:LPDDR4; DRAM Density:8Gbit; DRAM Memory Configuration:512M x 16bit; Clock Frequency:2.133GHz; Memory Case Style:WFBGA; No. of Pins:200Pins; Supply Voltage Nom:1.1V; Access Time:- RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT53D512M16D1DS-046 AIT:D | MT53D512M16D1DS-046AIT:D-ND | MT53D512M16D1DS-046 AIT:D | MT53D512M16D1DS-046 AIT:D | MT53D512M16D1DS-046 AIT:D | 80AH8239 | |
| Product Name | Memory - DDR - MT53D512M16D1DS-046 AIT:D | 2.133GHZ Memory IC and Storage Component | Memory | Memory | Memory | Integrated Circuits (ICs) - Memory | Dram, 512M X 16Bit, -40 To 95Deg C; Dram Type Micron |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | |
| Access Time | 3.5 ns | ||||||
| Operating Temperature | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | |||
| Address Bus Width | 16 bits | ||||||
| Package Type | BGA; Tray | 200-WFBGA | BGA; 200-WFBGA | BGA | WFBGA |
