IC DRAM 8GBIT 2.133GHZ 200WFBGA Product overview: MT53D512M16D1DS-046 AIT:D from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2.133GHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 2.133GHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT53D512M16D1DS-
Series: *
Categories: Memory
SDRAM - Mobile LPDDR4 Memory IC 8Gb (512M x 16) 2.133GHz 200-WFBGA (10x14.5)
IC DRAM 8GBIT 2.133GHZ 200WFBGA
SDRAM - Mobile LPDDR4 Memory IC 8Gbit 2.133 GHz 200-WFBGA (10x14.5)
DRAM, 512M X 16BIT, -40 TO 95DEG C; DRAM Type:LPDDR4; DRAM Density:8Gbit; DRAM Memory Configuration:512M x 16bit; Clock Frequency:2.133GHz; Memory Case Style:WFBGA; No. of Pins:200Pins; Supply Voltage Nom:1.1V; Access Time:- RoHS Compliant: Yes
IC DRAM 8GBIT 2.133GHZ 200WFBGA
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Newark, An Avnet Company | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT53D512M16D1DS-046 AIT:D | MT53D512M16D1DS-046AIT:D-ND | MT53D512M16D1DS-046 AIT:D | MT53D512M16D1DS-046 AIT:D | 80AH8239 | MT53D512M16D1DS-046 AIT:D | |
| Product Name | 2.133GHZ Memory IC and Storage Component | Memory - DDR - MT53D512M16D1DS-046 AIT:D | Memory | Integrated Circuits (ICs) - Memory | Memory | Dram, 512M X 16Bit, -40 To 95Deg C; Dram Type Micron | Memory |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | |
| Access Time | 3.5 ns | ||||||
| Operating Temperature | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | |||
| Address Bus Width | 16 bits | ||||||
| Package Type | BGA; Tray | 200-WFBGA | BGA | BGA; 200-WFBGA | WFBGA |
